公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

申请人： ASML NETHERLANDS B.V.

发明人： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC分类号： G01B11/14 ,  G03F7/20

摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20210208512A1

公开(公告)日：2021-07-08

申请号：US16346135

申请日：2017-11-01

申请人： ASML NETHERLANDS B.V.

发明人： Victor Emanuel CALADO ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU

IPC分类号： G03F7/20

摘要： A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

公开(公告)号：US20200310242A1

公开(公告)日：2020-10-01

申请号：US16099452

申请日：2017-05-17

申请人： ASML NETHERLANDS B.V.

发明人： Richard Johannes Franciscus VAN HAREN ,  Reiner Maria JUNGBLUT ,  Leon Paul VAN DIJK ,  Willem Seine Christian ROELOFS ,  Wim Tjibbo TEL ,  Stefan HUNSCHE ,  Maurits VAN DER SCHAAR

IPC分类号： G03F1/36 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

摘要： A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

公开(公告)号：US20210255553A1

公开(公告)日：2021-08-19

申请号：US17306670

申请日：2021-05-03

申请人： ASML Netherlands B.V.

发明人： Zili ZHOU ,  Nitesh PANDEY ,  Olger Victor ZWIER ,  Patrick WARNAAR ,  Maurits VAN DER SCHAAR ,  Elliott Gerard MC NAMARA ,  Arie Jeffrey DEN BOEF ,  Paul Christiaan HINNEN ,  Murat BOZKURT ,  Joost Jeroen OTTENS ,  Kaustuve BHATTACHARYYA ,  Michael KUBIS

IPC分类号： G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

摘要： A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US20190317412A1

公开(公告)日：2019-10-17

申请号：US16343168

申请日：2017-10-16

申请人： ASML NETHERLANDS B.V.

发明人： Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Erik Johannes Maria WALLERBOS ,  Maurits VAN DER SCHAAR ,  Frank STAALS ,  Franciscus Hendricus Arnoldus ELICH

IPC分类号： G03F7/20

摘要： A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US20190049860A1

公开(公告)日：2019-02-14

申请号：US16159884

申请日：2018-10-15

申请人： ASML Netherlands B.V.

发明人： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC分类号： G03F7/20

CPC分类号： G03F7/70633

摘要： Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20180373166A1

公开(公告)日：2018-12-27

申请号：US16007112

申请日：2018-06-13

申请人： ASML Netherlands B.V.

发明人： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC分类号： G03F7/20 ,  G01B11/27

摘要： Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

公开(公告)号：US20140327908A1

公开(公告)日：2014-11-06

申请号：US14335711

申请日：2014-07-18

申请人： ASML Netherlands B.V.

发明人： Marcus Adrianus VAN DE KERKHOF ,  Maurits VAN DER SCHAAR ,  Andreas FUCHS ,  Martyn John COOGANS

IPC分类号： G01N21/47

CPC分类号： G03F7/7065 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7088

摘要： The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

公开(公告)号：US20140233025A1

公开(公告)日：2014-08-21

申请号：US14264547

申请日：2014-04-29

申请人： ASML, Netherlands B.V.

发明人： Arie Jeffrey Maria DEN BOEF ,  Arno Jan BLEEKER ,  Youri Johannes Laurentius Maria VAN DOMMELEN ,  Mircea DUSA ,  Antoine Gaston Marie KIERS ,  Paul Frank LUEHRMANN ,  Henricus Petrus Maria PELLEMANS ,  Maurits VAN DER SCHAAR ,  Cedric Desire GROUWSTRA ,  Markus Gerardus Martinus VAN KRAAIJ

IPC分类号： G01N21/88

CPC分类号： G01N21/8806 ,  G03F7/70341 ,  G03F7/70633 ,  G03F7/7065 ,  G03F9/7034

摘要： An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

摘要翻译： 通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。 该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。

公开(公告)号：US20230176491A1

公开(公告)日：2023-06-08

申请号：US17923913

申请日：2021-04-21

申请人： ASML Netherlands B.V.

发明人： Olger Victor ZWIER ,  Maurits VAN DER SCHAAR ,  Hilko Dirk BOS ,  Hans VAN DER LAAN ,  S.M. Masudur Rahman AL ARIF ,  Henricus Wilhelmus Maria Van Buel ,  Armand Eugene Albert KOOLEN ,  Victor CALADO ,  Kaustuve BHATTACHARYYA ,  Jin LIAN ,  Sebastianus Adrianus GOORDEN ,  Hui Quan LIM

IPC分类号： G03F7/20

CPC分类号： G03F7/70641 ,  G03F7/70558 ,  G03F7/70633 ,  G03F7/70625

摘要： Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.