公开(公告)号：US20170315456A1

公开(公告)日：2017-11-02

申请号：US15487558

申请日：2017-04-14

Applicant: ASML Netherlands B.V.

Inventor： Nan LIN ,  Arie Jeffrey DEN BOEF ,  Sander Bas ROOBOL ,  Simon Gijsbert Josephus MATHIJSSEN ,  Niels GEYPEN

IPC: G03F7/20 ,  H01S3/16 ,  H01S3/00 ,  G01B11/24 ,  G02F1/37 ,  G02F1/355 ,  H01S3/13

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/9501 ,  G02F1/3551 ,  G02F1/37 ,  G03F7/70625 ,  G03F7/70633 ,  H01S3/0092 ,  H01S3/1305 ,  H01S3/1625 ,  H01S3/1636

Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

公开(公告)号：US20190278190A1

公开(公告)日：2019-09-12

申请号：US16421697

申请日：2019-05-24

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20230040124A1

公开(公告)日：2023-02-09

申请号：US17787253

申请日：2020-11-27

Applicant: ASML Netherlands B.V.

Inventor： Han-Kwang NIENHUYS ,  Teis Johan COENEN ,  Sander Bas ROOBOL ,  Jeroen COTTAAR ,  Seyed Iman MOSSAVAT ,  Niels GEYPEN ,  Sandy Claudia SCHOLZ ,  Christina Lynn PORTER

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

公开(公告)号：US20160161864A1

公开(公告)日：2016-06-09

申请号：US14906896

申请日：2014-07-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Abstract translation: 公开了一种测量光刻图形处理参数的方法和相关联的检查装置。 该方法包括使用多个不同的照明条件测量衬底上的至少两个目标结构，所述目标结构具有有意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意重叠偏差引起的贡献，（ii）在形成目标结构期间的覆盖误差，以及（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。

公开(公告)号：US20240369944A1

公开(公告)日：2024-11-07

申请号：US18287166

申请日：2022-04-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Maxim PISARENCO ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Vito Daniele RUTIGLIANI ,  Scott Anderson MIDDLEBROOKS ,  Coen Adrianus VERSCHUREN ,  Niels GEYPEN

IPC: G03F7/00 ,  G06N20/00

Abstract: A method of determining a stochastic metric, the method including: obtaining a trained model having been trained to correlate training optical metrology data to training stochastic metric data, wherein the training optical metrology data includes a plurality of measurement signals relating to distributions of an intensity related parameter across a zero or higher order of diffraction of radiation scattered from a plurality of training structures, and the training stochastic metric data includes stochastic metric values relating to the plurality of training structures, wherein the plurality of training structures have been formed with a variation in one or more dimensions on which the stochastic metric is dependent; obtaining optical metrology data including a distribution of the intensity related parameter across a zero or higher order of diffraction of radiation scattered from a structure; and using the trained model to infer a value of the stochastic metric from the optical metrology data.

公开(公告)号：US20190049860A1

公开(公告)日：2019-02-14

申请号：US16159884

申请日：2018-10-15

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.