公开(公告)号：US09939735B2

公开(公告)日：2018-04-10

申请号：US15429952

申请日：2017-02-10

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan Hinnen ,  Shu-jin Wang ,  Christian Marinus Leewis ,  Kuo-Feng Pao

IPC: G03F7/20 ,  G03F1/42

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

公开(公告)号：US09594299B2

公开(公告)日：2017-03-14

申请号：US14410496

申请日：2013-06-03

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan Hinnen ,  Shu-jin Wang ,  Christian Marinus Leewis ,  Kuo-Feng Pao

IPC: G03B27/52 ,  G03B27/68 ,  G03F1/44 ,  G03F7/20

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以使用第一散射仪信号来选择用于确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

公开(公告)号：US09436099B2

公开(公告)日：2016-09-06

申请号：US14273707

申请日：2014-05-09

Applicant: ASML Netherlands B.V.

Inventor： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

IPC: G03B27/32 ,  G03B27/52 ,  G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  G03F1/38

CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构组成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

公开(公告)号：US10394132B2

公开(公告)日：2019-08-27

申请号：US16096360

申请日：2017-04-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Miguel Garcia Granda ,  Christian Marinus Leewis ,  Frank Staals

IPC: G03B27/52 ,  G03F7/20 ,  G03F9/00

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.