公开(公告)号：US10895811B2

公开(公告)日：2021-01-19

申请号：US16599215

申请日：2019-10-11

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Elliott Gerard Mc Namara ,  Pierre-Yves Jerome Yvan Guittet ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers

IPC: G03F7/20

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

公开(公告)号：US10394132B2

公开(公告)日：2019-08-27

申请号：US16096360

申请日：2017-04-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Miguel Garcia Granda ,  Christian Marinus Leewis ,  Frank Staals

IPC: G03B27/52 ,  G03F7/20 ,  G03F9/00

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

公开(公告)号：US11385554B2

公开(公告)日：2022-07-12

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Steven Erik Steen ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers ,  Pierre-Yves Jerome Yvan Guittet ,  Frank Staals ,  Paulus Jacobus Maria Van Adrichem

IPC: G03F7/20 ,  G03F1/44 ,  G03F1/84

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

公开(公告)号：US10571812B2

公开(公告)日：2020-02-25

申请号：US16045979

申请日：2018-07-26

Applicant: ASML Netherlands B.V.

Inventor： Fahong Li ,  Miguel Garcia Granda ,  Carlo Cornelis Maria Luijten ,  Bart Peter Bert Segers ,  Cornelis Andreas Franciscus Johannes Van Der Poel ,  Frank Staals ,  Anton Bernhard Van Oosten ,  Mohamed Ridane

IPC: G03F7/20 ,  G01M11/02

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

公开(公告)号：US09518936B2

公开(公告)日：2016-12-13

申请号：US14648457

申请日：2013-10-30

Applicant: ASML Netherlands B.V.

Inventor： Willem Jan Grootjans ,  Henricus Johannes Lambertus Megens ,  Jouke Krist ,  Miguel Garcia Granda ,  Lu Xu

IPC: G03B27/54 ,  G01N21/956 ,  G03F7/20 ,  G01N21/47

CPC classification number: G01N21/95607 ,  G01N21/47 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/12 ,  G03F7/70133 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions. Method steps are: 602: printing a structure using a lithographic process using a grating pattern; 604: selecting a first characteristic, such as a polarization direction, for the illumination; 606: illuminating the structure with incident radiation with first characteristic 608: detecting scattered radiation; 610: selecting a second characteristic, such as a different polarization direction, for the illumination; 612: illuminating the structure with incident radiation with the second characteristic; 614: detecting scattered radiation; 616: rotating one or more angularly resolved spectrum to line up the polarizations, thus correcting for different orientations of the polarizations; 618: determining a difference between the measured angularly resolved spectra; and 620: determining a value of lithographic quality of the structure using the determined difference.

Abstract translation: 用于通过使用诸如光栅的周期性图案的光刻处理产生的结构的光刻质量的方法检测光刻工艺窗口边缘和最佳工艺条件。 方法步骤是：602：使用光栅图案使用光刻工艺印刷结构; 604：为照明选择诸如偏振方向的第一特性; 606：用具有第一特征608的入射辐射照射结构：检测散射辐射; 610：为照明选择诸如不同偏振方向的第二特性; 612：用具有第二特征的入射辐射照射结构; 614：检测散射辐射; 616：旋转一个或多个角度分辨的光谱以对齐偏振，从而校正偏振的不同取向; 618：确定测得的角度分辨光谱之间的差异; 和620：使用确定的差异来确定结构的平版印刷质量的值。