-
公开(公告)号：US11614690B2
公开(公告)日：2023-03-28
申请号：US16478489
申请日：2018-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Mu Feng , Mir Farrokh Shayegan Salek , Dianwen Zhu , Leiwu Zheng , Rafael C. Howell , Jen-Shiang Wang
IPC: G05B19/418 , G03F7/20
Abstract: Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.
Search Results
1
records
(took 0.013 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
