公开(公告)号：US11614690B2

公开(公告)日：2023-03-28

申请号：US16478489

申请日：2018-01-24

申请人： ASML NETHERLANDS B.V.

发明人： Mu Feng ,  Mir Farrokh Shayegan Salek ,  Dianwen Zhu ,  Leiwu Zheng ,  Rafael C. Howell ,  Jen-Shiang Wang

IPC分类号： G05B19/418 ,  G03F7/20

摘要： Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.

公开(公告)号：US10754256B2

公开(公告)日：2020-08-25

申请号：US15763387

申请日：2016-10-03

申请人： ASML NETHERLANDS B.V.

发明人： Thomas I. Wallow ,  Peng-cheng Yang ,  Adam Lyons ,  Mir Farrokh Shayegan Salek ,  Hermanus Adrianus Dillen

IPC分类号： G03F7/20 ,  G03F1/36

摘要： A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.