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公开(公告)号:USRE48903E1
公开(公告)日:2022-01-25
申请号:US16281179
申请日:2019-02-21
Applicant: ASML Netherlands B.V.
Inventor: Vincent Sylvester Kuiper , Erwin Slot , Marcel Nicolaas Jacobus Van Kervinck , Guido De Boer , Hendrik Jan De Jong
IPC: G03F7/20 , H01L21/677 , H01L21/67 , G03B27/60 , G03B27/58
Abstract: An apparatus for transferring a target, such as a substrate or a substrate support structure onto which a substrate has been clamped, from a substrate transfer system to a vacuum chamber of a lithography system. The apparatus comprises a load lock chamber for transferring the target into and out of the vacuum chamber. The load lock chamber comprises a first wall with a first passage providing access between a robot space and the interior of the load lock chamber, a second wall with a second passage providing access between the interior of the load lock chamber and the vacuum chamber, and plurality of handling robots for transferring the targets comprising: a first handling robot movable within the robot space to access the substrate transfer system and the first passage; and a second handling robot movable within the load lock chamber to access the first passage and the second passage.
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公开(公告)号:USRE49952E1
公开(公告)日:2024-04-30
申请号:US16838976
申请日:2020-04-02
Applicant: ASML Netherlands B.V.
Inventor: Vincent Sylvester Kuiper , Erwin Slot
IPC: H01J37/317 , H01J37/09 , H01J37/30
CPC classification number: H01J37/3177 , H01J37/09 , H01J37/3007 , H01J2237/0435 , H01J2237/0453 , H01J2237/3175 , H01J2237/31774
Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.
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公开(公告)号:USRE49732E1
公开(公告)日:2023-11-21
申请号:US16427228
申请日:2019-05-30
Applicant: ASML Netherlands B.V.
Inventor: Paul IJmert Scheffers , Jan Andries Meijer , Erwin Slot , Vincent Sylvester Kuiper , Niels Vergeer
CPC classification number: H01J37/3045 , B82Y10/00 , B82Y40/00 , G03F7/707 , H01J2237/1502
Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. i.e., 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
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公开(公告)号:USRE48046E1
公开(公告)日:2020-06-09
申请号:US14469544
申请日:2014-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor: Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan-Jaco Wieland , Stijn Willem Herman Karel Steenbrink
IPC: H01J3/00 , H01J37/304 , B82Y10/00 , H01J37/317 , B82Y40/00
Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
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公开(公告)号:USRE49602E1
公开(公告)日:2023-08-08
申请号:US16896953
申请日:2020-09-02
Applicant: ASML NETHERLANDS B.V.
Inventor: Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan-Jaco Wieland , Stijn Willem Herman Karel Steenbrink
IPC: H01J3/00 , H01J37/317 , B82Y10/00 , B82Y40/00 , H01J37/304
CPC classification number: H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2443 , H01J2237/2446 , H01J2237/30433 , H01J2237/31757
Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which
the charged particle beams are converted into light beams by using a converter element,
using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams,
electronically reading out resulting signals from said detectors after exposure thereof by said light beams,
utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and
electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
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