公开(公告)号：US11875101B2

公开(公告)日：2024-01-16

申请号：US17616368

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Feng Chen ,  Matteo Alessandro Francavilla ,  Jan Wouter Bijlsma

IPC: G06F30/30 ,  G06F30/398 ,  G03F7/00 ,  G06F30/392 ,  G06F30/27 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F7/705 ,  G06F30/27 ,  G06F30/392 ,  G06F2119/18

Abstract: A patterning process modeling method includes determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end includes a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：US11568123B2

公开(公告)日：2023-01-31

申请号：US17157642

申请日：2021-01-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang Fan ,  Feng Chen ,  Wangshi Zhao ,  Youping Zhang

IPC: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20210150116A1

公开(公告)日：2021-05-20

申请号：US17157642

申请日：2021-01-25

Applicant: ASML Netherlands B.V.

Inventor： Chi-Hsiang Fan ,  Feng Chen ,  Wangshi Zhao ,  Youping Zhang

IPC: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.