-
公开(公告)号：US11947266B2
公开(公告)日：2024-04-02
申请号：US17297171
申请日：2019-11-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Nicolaas Petrus Marcus Brantjes , Matthijs Cox , Boris Menchtchikov , Cyrus Emil Tabery , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxim Philippe Frederic Genin
CPC classification number: G03F7/70491 , G03F7/70633 , G03F9/7046
Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
-
公开(公告)号：US11568123B2
公开(公告)日：2023-01-31
申请号：US17157642
申请日：2021-01-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Chi-Hsiang Fan , Feng Chen , Wangshi Zhao , Youping Zhang
IPC: G06F30/398 , G03F1/36
Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.
-
公开(公告)号：US10481503B2
公开(公告)日：2019-11-19
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
-
4.发明申请Method And Apparatus for Measuring a Parameter of a Lithographic Process, Substrate and Patterning Devices for use in the Method 审中-公开用于测量方法中使用的平版印刷工艺，基板和图案化装置的参数的方法和装置公开(公告)号：US20170059999A1
公开(公告)日：2017-03-02
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构。 每个目标结构具有使用第一和第二光刻步骤在衬底上的单个材料层中形成的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻 以接近第一光刻步骤中形成的特征的空间周期的一半的第一偏压量步进，并且在第二目标结构中，在第二光刻步骤中限定的特征相对于第一光刻步骤中限定的特征移位 光刻步骤接近接近所述空间周期的一半的第二偏置量并且不同于第一偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理的参数的测量 第一和第二目标结构。
-
公开(公告)号：US11966166B2
公开(公告)日：2024-04-23
申请号：US17377648
申请日：2021-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/70425 , G03F7/705 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F7/7085 , G03F9/7046 , G03F9/7088 , G06F30/39
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
-
Patent Agency Ranking
公开(公告)号：US20180268093A1
公开(公告)日：2018-09-20
申请号：US15982933
申请日：2018-05-17
Applicant: ASML Netherlands B.V.
Inventor： Guangqing CHEN , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
-
公开(公告)号：US12044980B2
公开(公告)日：2024-07-23
申请号：US17296316
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Wim Tjibbo Tel , Daan Maurits Slotboom , Vadim Yourievich Timoshkov , Koen Wilhelmus Cornelis Adrianus Van Der Straten , Boris Menchtchikov , Simon Philip Spencer Hastings , Cyrus Emil Tabery , Maxime Philippe Frederic Genin , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng
IPC: G05B19/418 , G03F7/00
CPC classification number: G03F7/70625 , G03F7/70616 , G05B19/4188 , G03F7/70525
Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
-
公开(公告)号：US11320745B2
公开(公告)日：2022-05-03
申请号：US17012705
申请日：2020-09-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
-
公开(公告)号：US11187995B2
公开(公告)日：2021-11-30
申请号：US16346135
申请日：2017-11-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Victor Emanuel Calado , Youping Zhang , Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren , Xing Lan Liu
IPC: G03F7/20
Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.
-
10.发明授权公开(公告)号：US10802409B2
公开(公告)日：2020-10-13
申请号：US15962826
申请日：2018-04-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Chi-Hsiang Fan , Maurits Van Der Schaar , Youping Zhang
IPC: G03F7/20
Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.
-
-
-
-
-
-
-
-
-
Search Results
30
records
(took 0.019 seconds)
