公开(公告)号：US11568123B2

公开(公告)日：2023-01-31

申请号：US17157642

申请日：2021-01-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang Fan ,  Feng Chen ,  Wangshi Zhao ,  Youping Zhang

IPC: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US10802409B2

公开(公告)日：2020-10-13

申请号：US15962826

申请日：2018-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang Fan ,  Maurits Van Der Schaar ,  Youping Zhang

IPC: G03F7/20

Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

公开(公告)号：US11281113B2

公开(公告)日：2022-03-22

申请号：US17053255

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Danying Li ,  Chi-Hsiang Fan ,  Abdalmohsen Elmalk ,  Youping Zhang ,  Jay Jianhui Chen ,  Kui-Jun Huang

IPC: G03F7/20

Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

公开(公告)号：US10782616B2

公开(公告)日：2020-09-22

申请号：US16325767

申请日：2017-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Daimian Wang ,  Shengrui Zhang ,  Chi-Hsiang Fan

IPC: G06F30/33 ,  G03F7/20 ,  G03F9/00

Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.

公开(公告)号：US10578980B2

公开(公告)日：2020-03-03

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus Huijgen ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03B27/32 ,  G03F7/20 ,  G01N21/956 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US20210150116A1

公开(公告)日：2021-05-20

申请号：US17157642

申请日：2021-01-25

Applicant: ASML Netherlands B.V.

Inventor： Chi-Hsiang Fan ,  Feng Chen ,  Wangshi Zhao ,  Youping Zhang

IPC: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20200150547A1

公开(公告)日：2020-05-14

申请号：US16744269

申请日：2020-01-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.