Abstract:
A lithographic projection apparatus for EUV lithography includes a foil trap. The foil trap forms an open structure after the EUV source to let the EUV radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the EUV radiation can be transferred on debris present in the EUV beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced.
Abstract:
A lithographic projection apparatus includes a radiation system configured to form a projection beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the projection beam provides the projection beam with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.
Abstract:
A lithographic projection apparatus includes a grazing incidence collector. The grazing incidence collector is made up of several reflectors. In order to reduce the amount of heat on the collector, the reflectors are coated. The reflector at the exterior of the collector has an infrared radiating layer on the outside. The inner reflectors are coated with an EUV reflective layer on the outside.