公开(公告)号：US11635698B2

公开(公告)日：2023-04-25

申请号：US16959736

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

IPC: G03F7/20 ,  G06F17/18 ,  G06K9/62

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US10990018B2

公开(公告)日：2021-04-27

申请号：US16481143

申请日：2018-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G06F17/50 ,  G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20230221654A1

公开(公告)日：2023-07-13

申请号：US18122655

申请日：2023-03-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

IPC: G03F7/20 ,  G06F17/18

CPC classification number: G03F7/705 ,  G06F18/24 ,  G06F17/18 ,  G03F7/70633

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US12189302B2

公开(公告)日：2025-01-07

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/07 ,  G03F7/00 ,  G06F30/20 ,  G06N3/02 ,  G06F119/18 ,  G06F119/22

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US12044979B2

公开(公告)日：2024-07-23

申请号：US18122655

申请日：2023-03-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

IPC: G03F7/00 ,  G06F17/18 ,  G06F18/24

CPC classification number: G03F7/705 ,  G03F7/70633 ,  G06F17/18 ,  G06F18/24

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US11347150B2

公开(公告)日：2022-05-31

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US11281110B2

公开(公告)日：2022-03-22

申请号：US16973395

申请日：2019-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Van Dongen ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Yichen Zhang ,  Andrea Cavalli ,  Bart Laurens Sjenitzer ,  Simon Philip Spencer Hastings

IPC: G03F7/20

Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

公开(公告)号：US11061336B2

公开(公告)日：2021-07-13

申请号：US16493835

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Hubertus Johannes Gertrudus Simons ,  Everhardus Cornelis Mos ,  Xiuhong Wei ,  Reza Mahmoodi Baram ,  Hadi Yagubizade ,  Yichen Zhang

IPC: G03B27/68 ,  G03F7/20

Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.