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公开(公告)号：US20140313496A1
公开(公告)日：2014-10-23
申请号：US14351012
申请日：2012-09-21
Applicant: ASML Netherlands B.V.
Inventor： Arjan Gijsbertsen , Hubertus Antonius Geraets , Bart Peter Bert Segers , Natalia Victorovna Davydova
CPC classification number: G03F7/702 , G01T1/02 , G03F7/70558 , G03F7/70625 , G03F7/70641 , G03F9/7026 , G03F9/7084
Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.
Abstract translation: 一种光刻设备，包括被构造成支撑图案形成装置的支撑结构，所述图案形成装置能够在其横截面中赋予具有光栅的EUV辐射束以形成图案化的EUV辐射束，以及投影系统， EUV辐射束到基板的目标部分上，其中支撑结构设置有包括与一系列第二反射部分交替的一系列第一反射部分的光栅，第二反射部分的反射率小于反射率 的至少部分的第一反射部分并且大于零。
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公开(公告)号：US09519224B2
公开(公告)日：2016-12-13
申请号：US14351012
申请日：2012-09-21
Applicant: ASML Netherlands B.V.
Inventor： Arjan Gijsbertsen , Hubertus Antonius Geraets , Bart Peter Bert Segers , Natalia Viktorovna Davydova
CPC classification number: G03F7/702 , G01T1/02 , G03F7/70558 , G03F7/70625 , G03F7/70641 , G03F9/7026 , G03F9/7084
Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.
Abstract translation: 一种光刻设备，包括被构造成支撑图案形成装置的支撑结构，所述图案形成装置能够在其横截面中赋予具有光栅的EUV辐射束以形成图案化的EUV辐射束，以及投影系统， EUV辐射束到基板的目标部分上，其中支撑结构设置有包括与一系列第二反射部分交替的一系列第一反射部分的光栅，第二反射部分的反射率小于反射率 的至少部分的第一反射部分并且大于零。
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公开(公告)号：US11067902B2
公开(公告)日：2021-07-20
申请号：US16635584
申请日：2018-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick Warnaar , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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公开(公告)号：US10895811B2
公开(公告)日：2021-01-19
申请号：US16599215
申请日：2019-10-11
Applicant: ASML Netherlands B.V.
Inventor： Miguel Garcia Granda , Elliott Gerard Mc Namara , Pierre-Yves Jerome Yvan Guittet , Eric Jos Anton Brouwer , Bart Peter Bert Segers
IPC: G03F7/20
Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.
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公开(公告)号：US12189302B2
公开(公告)日：2025-01-07
申请号：US17738093
申请日：2022-05-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
IPC: G03F7/07 , G03F7/00 , G06F30/20 , G06N3/02 , G06F119/18 , G06F119/22
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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Patent Agency Ranking
公开(公告)号：US11347150B2
公开(公告)日：2022-05-31
申请号：US17197167
申请日：2021-03-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US20210349395A1
公开(公告)日：2021-11-11
申请号：US17379662
申请日：2021-07-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick WARNAAR , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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公开(公告)号：US10649342B2
公开(公告)日：2020-05-12
申请号：US16308835
申请日：2017-06-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Léon Maria Albertus Van Der Logt , Bart Peter Bert Segers , Simon Hendrik Celine Van Gorp , Carlo Cornelis Maria Luijten , Frank Staals
IPC: G03F7/20
Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
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公开(公告)号：US11385554B2
公开(公告)日：2022-07-12
申请号：US16456878
申请日：2019-06-28
Applicant: ASML Netherlands B.V.
Inventor： Miguel Garcia Granda , Steven Erik Steen , Eric Jos Anton Brouwer , Bart Peter Bert Segers , Pierre-Yves Jerome Yvan Guittet , Frank Staals , Paulus Jacobus Maria Van Adrichem
Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.
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公开(公告)号：US10990018B2
公开(公告)日：2021-04-27
申请号：US16481143
申请日：2018-02-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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