公开(公告)号：US20210208513A1

公开(公告)日：2021-07-08

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US20230205097A1

公开(公告)日：2023-06-29

申请号：US18000148

申请日：2021-05-10

Applicant: ASML Netherlands B.V.

Inventor： Mattia MARELLI ,  Mohammadreza HAJIAHMADI

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70641 ,  G03F9/7076 ,  G03F9/7026

Abstract: Disclosed is a method for determining a focus parameter value used to expose at least one structure on a substrate. The method comprises obtaining measurement data relating to a measurement of said at least one structure, wherein the at least one structure comprises a single periodic structure per measurement location and decomposing said measurement data into component data comprising one or more components of said measurement data. At least one of said components is processed to extract processed component data having a reduced dependence on non-focus related effects and a value for the focus parameter is determined from said processed component data. Associated apparatuses and patterning devices are also disclosed.

公开(公告)号：US20190056220A1

公开(公告)日：2019-02-21

申请号：US16102145

申请日：2018-08-13

Applicant: ASML Netherlands B.V.

Inventor： Farzad FARHADZADEH ,  Mohammadreza HAJIAHMADI ,  Maurits VAN DER SCHAAR ,  Murat BOZKURT

IPC: G01B11/27

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：US20180321597A1

公开(公告)日：2018-11-08

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/00

CPC classification number: G03F7/70625 ,  G01M11/00 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.