公开(公告)号：US20190107785A1

公开(公告)日：2019-04-11

申请号：US16155424

申请日：2018-10-09

Applicant: ASML Netherlands B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza Hajiahmadi ,  Murat Bozkurt ,  Alberto Da Costa Assafrao ,  Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Jin Lian

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：US20210208513A1

公开(公告)日：2021-07-08

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US20250131552A1

公开(公告)日：2025-04-24

申请号：US18834970

申请日：2023-01-18

Applicant: ASML Netherlands B.V.

Inventor： Shahrzad NAGHIBZADEH ,  Narjes JAVAHERI

IPC: G06T7/00 ,  G03F7/00

Abstract: Disclosed is a method for determining a parameter of interest relating to at least one target on a substrate. The method comprises obtaining metrology data comprising at least one asymmetry signal, said at least one asymmetry signal comprising a difference or imbalance in a measurement parameter from the target; obtaining a trained model having been trained or configured to relate said at least one asymmetry signal to the parameter of interest, the trained model comprising at least one proxy for at least one nuisance component of the at least one asymmetry signal; and inferring said parameter of interest for said at least one target from said at least one asymmetry signal using the trained model.

公开(公告)号：US20180321597A1

公开(公告)日：2018-11-08

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/00

CPC classification number: G03F7/70625 ,  G01M11/00 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.