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公开(公告)号：US11448974B2
公开(公告)日：2022-09-20
申请号：US17207936
申请日：2021-03-22
摘要： A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
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公开(公告)号：US10451978B2
公开(公告)日：2019-10-22
申请号：US16010320
申请日：2018-06-15
发明人： Kaustuve Bhattacharyya , Simon Gijsbert Josephus Mathijssen , Marc Johannes Noot , Arie Jeffrey Den Boef , Mohammadreza Hajiahmadi , Farzad Farhadzadeh
摘要： A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.
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公开(公告)号：US20190107785A1
公开(公告)日：2019-04-11
申请号：US16155424
申请日：2018-10-09
发明人： Narjes JAVAHERI , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
摘要： Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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公开(公告)号：US11181828B2
公开(公告)日：2021-11-23
申请号：US16601778
申请日：2019-10-15
发明人： Patrick Warnaar , Hilko Dirk Bos , Hendrik Jan Hidde Smilde , Mohammadreza Hajiahmadi , Lukasz Jerzy Macht , Karel Hendrik Wouter Van Den Bos , Sergei Sokolov , Lucas Tijn Kunneman
摘要： Techniques for determining a value of a parameter of interest of a patterning process are described. One such technique involves obtaining a plurality of calibration data units from one or more targets in a metrology process. Each calibration data unit of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target having a structure formed using the patterning process on the substrate or on a further substrate. A value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
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公开(公告)号：US10990020B2
公开(公告)日：2021-04-27
申请号：US15964643
申请日：2018-04-27
摘要： A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
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公开(公告)号：US11009345B2
公开(公告)日：2021-05-18
申请号：US16418235
申请日：2019-05-21
摘要： Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient.
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公开(公告)号：US10705437B2
公开(公告)日：2020-07-07
申请号：US16155424
申请日：2018-10-09
发明人： Narjes Javaheri , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
IPC分类号： G03F7/20 , G01N21/47 , G01B11/24 , G01B11/30 , H01L23/544
摘要： Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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公开(公告)号：US10481506B2
公开(公告)日：2019-11-19
申请号：US15967861
申请日：2018-05-01
发明人： Murat Bozkurt , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC分类号： G03F7/20 , G01N21/47 , G01N21/956 , G01N21/95
摘要： An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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9.发明申请公开(公告)号：US20180321599A1
公开(公告)日：2018-11-08
申请号：US15967861
申请日：2018-05-01
发明人： Murat BOZKURT , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70616 , G03F7/7085
摘要： An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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10.发明授权公开(公告)号：US12112260B2
公开(公告)日：2024-10-08
申请号：US16424811
申请日：2019-05-29
发明人： Lorenzo Tripodi , Patrick Warnaar , Grzegorz Grzela , Mohammadreza Hajiahmadi , Farzad Farhadzadeh , Patricius Aloysius Jacobus Tinnemans , Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Frank Staals , Brennan Peterson , Anton Bernhard Van Oosten
CPC分类号： G06N3/08 , G01B11/02 , G01N21/55 , G06T7/0006 , G06T7/001 , G01B2210/56 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
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