公开(公告)号：US20240095437A1

公开(公告)日：2024-03-21

申请号：US18382822

申请日：2023-10-23

申请人： ASML Netherlands B.V.

发明人： Quan ZHANG ,  Yong-Ju Cho ,  Zhangnan Zhu ,  Boyang Huang ,  Been-Der Chen

IPC分类号： G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/00

CPC分类号： G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F1/44

摘要： A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.

公开(公告)号：US11797748B2

公开(公告)日：2023-10-24

申请号：US17418102

申请日：2019-11-18

申请人： ASML NETHERLANDS B.V.

发明人： Quan Zhang ,  Yong-Ju Cho ,  Zhangnan Zhu ,  Boyang Huang ,  Been-Der Chen

IPC分类号： G06F30/30 ,  G03F7/00 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F1/44 ,  G06F119/18

CPC分类号： G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F1/44 ,  G06F2119/18

摘要： A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.