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公开(公告)号：US20230100578A1
公开(公告)日：2023-03-30
申请号：US17796751
申请日：2021-02-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu CAO , Jun TAO , Quan ZHANG , Yongsheng SHU , Wei-chun FONG
IPC: G03F1/36 , G06N3/0464 , G03F7/20
Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.
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公开(公告)号：US20240095437A1
公开(公告)日：2024-03-21
申请号：US18382822
申请日：2023-10-23
Applicant: ASML Netherlands B.V.
Inventor： Quan ZHANG , Yong-Ju Cho , Zhangnan Zhu , Boyang Huang , Been-Der Chen
IPC: G06F30/398 , G03F1/36 , G03F1/70 , G03F7/00
CPC classification number: G06F30/398 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F1/44
Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
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公开(公告)号：US20230044490A1
公开(公告)日：2023-02-09
申请号：US17782741
申请日：2020-11-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Quan ZHANG , Tatung CHOW , Been-Der CHEN , Yen-Wen LU
Abstract: A method of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning a portion of a design layout including the target pattern into a plurality of cells with reference to a given location on the target pattern; assigning a plurality of variables within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining, based on values of the plurality of variables, the mask pattern for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.
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Patent Agency Ranking
4.发明公开公开(公告)号：US20240119582A1
公开(公告)日：2024-04-11
申请号：US18276018
申请日：2022-01-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Quan ZHANG , Been-Der CHEN , Wei-chun Fong , Zhangnan ZHU , Robert Elliott BOONE
CPC classification number: G06T7/001 , G03F1/36 , G06T2207/20081 , G06T2207/20212 , G06T2207/30148
Abstract: Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.
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公开(公告)号：US20220100079A1
公开(公告)日：2022-03-31
申请号：US17418102
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Quan ZHANG , Yong-Ju CHO , Zhangnan ZHU , Boyang HUANG , Been-Der CHEN
Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
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公开(公告)号：US20230141799A1
公开(公告)日：2023-05-11
申请号：US18089848
申请日：2022-12-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Roshni BISWAS , Rafael C. HOWELL , Cuiping ZHANG , Ningning JIA , Jingjing LIU , Quan ZHANG
IPC: G06F30/398 , G06F30/392 , G03F7/20
CPC classification number: G06F30/398 , G06F30/392 , G03F7/70441 , G03F7/705 , G03F7/70625 , G06F2119/18
Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
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公开(公告)号：US20210048753A1
公开(公告)日：2021-02-18
申请号：US16976492
申请日：2019-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Quan ZHANG , Been-Der CHENG , Rafael C. HOWELL , Jing SU , Yi ZOU , Yen-Wen LU
Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.
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公开(公告)号：US20200050099A1
公开(公告)日：2020-02-13
申请号：US16606791
申请日：2018-05-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Jing SU , Yi ZOU , Chenxi LIN , Yu CAO , Yen-Wen LU , Been-Der CHEN , Quan ZHANG , Stanislas Hugo Louis BARON , Ya LUO
Abstract: A method including: obtaining a portion of a design layout; determining characteristics of assist features based on the portion or characteristics of the portion; and training a machine learning model using training data including a sample whose feature vector includes the characteristics of the portion and whose label includes the characteristics of the assist features. The machine learning model may be used to determine characteristics of assist features of any portion of a design layout, even if that portion is not part of the training data.
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