公开(公告)号：US20240256976A1

公开(公告)日：2024-08-01

申请号：US18565759

申请日：2022-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

IPC: G06N20/00 ,  G03F1/36

CPC classification number: G06N20/00 ,  G03F1/36

Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

公开(公告)号：US20240004305A1

公开(公告)日：2024-01-04

申请号：US18039697

申请日：2021-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

IPC: G03F7/00 ,  G03F1/36

CPC classification number: G03F7/70283 ,  G03F1/36

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for generating data for a mask pattern associated with a patterning process includes obtaining (i) a first mask image (e.g., CTM) associated with a design pattern, (ii) a contour (e.g., a resist contour) based on the first mask image, (iii) a reference contour (e.g., an ideal resist contour) based on the design pattern; and (iv) a contour difference between the contour and the reference contour. The contour difference and the first mask image are inputted to a model to generate mask image modification data. Based on the first mask image and the mask image modification data, a second mask image is generated for determining a mask pattern to be employed in the patterning process.

公开(公告)号：US20220137503A1

公开(公告)日：2022-05-05

申请号：US17429770

申请日：2020-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun TAO ,  Stanislas Hugo Louis BARON ,  Jing SU ,  Ya LUO ,  Yu CAO

IPC: G03F1/36 ,  G06T7/00 ,  G06T7/60

Abstract: Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

公开(公告)号：US20140359543A1

公开(公告)日：2014-12-04

申请号：US14462187

申请日：2014-08-18

Applicant: ASML Netherlands B.V.

Inventor： Jun TAO ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Min-Chun Tsai ,  Dong Mao

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70441

Abstract: Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.

Abstract translation: 这里描述了一种用于获得光刻工艺的优选布局的方法，该方法包括：识别包括多个特征的初始布局; 并重新配置特征直到满足终止条件，从而获得优选布局; 其中所述重新配置包括评估成本函数，所述成本函数测量光刻度量如何受到用于多个平版印刷工艺条件的所述特征的一组变化的影响，以及将所述成本函数扩展成一系列术语，其中至少一些是 特点的特点。

公开(公告)号：US20230100578A1

公开(公告)日：2023-03-30

申请号：US17796751

申请日：2021-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Jun TAO ,  Quan ZHANG ,  Yongsheng SHU ,  Wei-chun FONG

IPC: G03F1/36 ,  G06N3/0464 ,  G03F7/20

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.