公开(公告)号：US11508547B2

公开(公告)日：2022-11-22

申请号：US16435145

申请日：2019-06-07

申请人： ASML Netherlands B.V.

发明人： Yongxin Wang ,  Zhonghua Dong ,  Rui-Ling Lai ,  Kenichi Kanai

IPC分类号： H01J37/244 ,  G01T1/24 ,  H01J37/28 ,  H01J37/285 ,  H01L31/08

摘要： A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

公开(公告)号：US11843069B2

公开(公告)日：2023-12-12

申请号：US16703294

申请日：2019-12-04

申请人： ASML Netherlands B.V.

发明人： Gianpaolo Lorito ,  Stoyan Nihtianov ,  Xinqing Liang ,  Kenichi Kanai

IPC分类号： H01L31/115 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01L31/115 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2441

摘要： The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.