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    Electronic device and input element thereof
    2.
    发明授权
    Electronic device and input element thereof 有权

    公开(公告)号：US10782820B2

    公开(公告)日：2020-09-22

    申请号：US16380099

    申请日：2019-04-10

    Applicant: ASUSTeK COMPUTER INC.

    Inventor： Bin-Yi Lin ,  Chung-Wei Liang

    IPC: G06F3/0354 ,  G06F3/041

    Abstract: An electronic device and an input element thereof are provided. The electronic device includes a first body, a second body and an input element. The second body with an accommodating groove is connected to the first body. The input element is detachably accommodated in the accommodating groove of the second body and includes a pressure sensing layer, a vibration layer and a transmission layer. The pressure sensing layer of the input element receives a force to generate a signal. The vibration layer vibrates according to the signal. The transmission layer is disposed between the pressure sensing layer and the vibration layer and configured to transmit the vibration generated by the vibration layer.

    Notebook computer
    3.
    发明授权
    Notebook computer 有权

    公开(公告)号：US11507138B2

    公开(公告)日：2022-11-22

    申请号：US17308773

    申请日：2021-05-05

    Applicant: ASUSTEK COMPUTER INC.

    Inventor： Bin-Yi Lin ,  Ying-Ching Tseng

    IPC: G06F1/16 ,  H01Q1/22

    Abstract: A notebook computer is provided. The notebook computer includes a first body, a second body, and a pivotally connection structure. The first body includes a first surface, and the first surface includes a wireless signal transmitting element. The second body includes a second surface, and the second surface includes a wireless signal receiving element. The pivotally connection structure connects with the first body and the second body. When the second body rotates relative to the first body through the pivotally connection structure, the second surface moves toward the first surface, so that the wireless signal receiving element is aligned with the wireless signal transmitting element.

    INPUT DEVICE
    4.
    发明申请
    INPUT DEVICE 有权

    公开(公告)号：US20210004092A1

    公开(公告)日：2021-01-07

    申请号：US16903513

    申请日：2020-06-17

    Applicant: ASUSTeK COMPUTER INC.

    Inventor： Bin-Yi Lin

    IPC: G06F3/0354 ,  G06F3/01 ,  G06F3/038

    Abstract: An input device is provided, including a curved segment, a sensing segment and a second sensing structure. The sensing segment is pivotally connected to the curved segment and includes a first sensing structure. The second sensing structure covers the curved segment and the sensing segment. The curved segment includes a plurality of connecting bodies and a supporting element. Each connecting body includes a recess. Adjacent connecting bodies are mutually pivotally connected, and the recesses are connected to each other to form an accommodation space. The supporting element is disposed in the accommodation space and connected to the connecting bodies.

    METHOD FOR FABRICATING CAPACITOR
    6.
    发明申请
    METHOD FOR FABRICATING CAPACITOR 有权
    电容器制作方法

    公开(公告)号：US20170005161A1

    公开(公告)日：2017-01-05

    申请号：US15200001

    申请日：2016-07-01

    Applicant: ASUSTeK COMPUTER INC.

    Inventor： Bin-Yi Lin

    IPC: H01L49/02

    CPC classification number: H01L28/92 ,  H01G4/12 ,  H01G4/33 ,  H01L28/55

    Abstract: A method for fabricating a capacitor includes following steps: providing a substrate and a first conducting material layer which is disposed on the substrate; removing a part of the first conducting material layer to expose a part of the substrate to form a plurality of first inner electrodes, wherein the first inner electrodes are arranged along a first direction, and the adjacent first inner electrodes have an interval therebetween; forming a dielectric layer along a second direction by a chemical vapor deposition process, wherein the first direction is perpendicular to the second direction so that the dielectric layer covers the first inner electrodes and the exposed part of the substrate, and the dielectric layer does not fully fill the intervals; and forming a second conducting material layer to fill the intervals that are not fully filled by the dielectric layer to form a plurality of second inner electrodes.

    Abstract translation: 制造电容器的方法包括以下步骤：提供衬底和设置在衬底上的第一导电材料层; 去除所述第一导电材料层的一部分以暴露所述衬底的一部分以形成多个第一内部电极，其中所述第一内部电极沿着第一方向布置，并且所述相邻的所述第一内部电极之间具有间隔; 通过化学气相沉积工艺沿着第二方向形成电介质层，其中第一方向垂直于第二方向，使得电介质层覆盖第一内电极和衬底的暴露部分，并且电介质层不完全 填补间隔; 以及形成第二导电材料层以填充未被电介质层完全填充的间隔，以形成多个第二内部电极。

    Input touch device with curved segment that changes shape
    7.
    发明授权
    Input touch device with curved segment that changes shape 有权

    公开(公告)号：US11249563B2

    公开(公告)日：2022-02-15

    申请号：US16903513

    申请日：2020-06-17

    Applicant: ASUSTeK COMPUTER INC.

    Inventor： Bin-Yi Lin

    IPC: G06F3/03 ,  G06F3/0354 ,  G06F3/038 ,  G06F3/01

    Abstract: An input device is provided, including a curved segment, a sensing segment and a second sensing structure. The sensing segment is pivotally connected to the curved segment and includes a first sensing structure. The second sensing structure covers the curved segment and the sensing segment. The curved segment includes a plurality of connecting bodies and a supporting element. Each connecting body includes a recess. Adjacent connecting bodies are mutually pivotally connected, and the recesses are connected to each other to form an accommodation space. The supporting element is disposed in the accommodation space and connected to the connecting bodies.

    Method for fabricating capacitor
    9.
    发明授权
    Method for fabricating capacitor 有权

    公开(公告)号：US09887258B2

    公开(公告)日：2018-02-06

    申请号：US15200001

    申请日：2016-07-01

    Applicant: ASUSTek COMPUTER INC.

    Inventor： Bin-Yi Lin

    IPC: H01L49/02 ,  H01G4/33 ,  H01G4/12

    CPC classification number: H01L28/92 ,  H01G4/12 ,  H01G4/33 ,  H01L28/55

    Abstract: A method for fabricating a capacitor includes following steps: providing a substrate and a first conducting material layer which is disposed on the substrate; removing a part of the first conducting material layer to expose a part of the substrate to form a plurality of first inner electrodes, wherein the first inner electrodes are arranged along a first direction, and the adjacent first inner electrodes have an interval therebetween; forming a dielectric layer along a second direction by a chemical vapor deposition process, wherein the first direction is perpendicular to the second direction so that the dielectric layer covers the first inner electrodes and the exposed part of the substrate, and the dielectric layer does not fully fill the intervals; and forming a second conducting material layer to fill the intervals that are not fully filled by the dielectric layer to form a plurality of second inner electrodes.

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