公开(公告)号：US11605652B2

公开(公告)日：2023-03-14

申请号：US16726846

申请日：2019-12-25

Applicant: Au Optronics Corporation

Inventor： Yu-Hsing Liang ,  Hsiu-Hua Wang ,  Chan-Jui Liu ,  Pin-Miao Liu ,  Chun-Cheng Cheng

IPC: H01L27/14 ,  H01L27/12

Abstract: An array substrate includes a substrate as well as a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer and a conductive structure sequentially formed thereon. The first insulating layer has a first opening communicated with a through hole of the substrate. The first conductive layer includes a first ring pattern extending from top of the first insulating layer into the first opening. The second insulating layer has a second opening communicated with the first opening. The second conductive layer includes a second ring pattern extending from top of the second insulating layer into the second opening. The first ring pattern laterally protrudes toward an axis of the through hole from the second ring pattern. The conductive structure extends from above the second insulating layer to a bottom surface of the substrate through the first and second openings and the through hole.

公开(公告)号：US10475826B2

公开(公告)日：2019-11-12

申请号：US15971086

申请日：2018-05-04

Applicant: AU OPTRONICS CORPORATION

Inventor： Shuo-Yang Sun ,  Yu-Hsing Liang ,  Wan-Chen Huang ,  Chun-Cheng Cheng

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/144 ,  H01L27/32

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.

公开(公告)号：US20200373333A1

公开(公告)日：2020-11-26

申请号：US16726846

申请日：2019-12-25

Applicant: Au Optronics Corporation

Inventor： Yu-Hsing Liang ,  Hsiu-Hua Wang ,  Chan-Jui Liu ,  Pin-Miao Liu ,  Chun-Cheng Cheng

IPC: H01L27/12

Abstract: An array substrate includes a substrate as well as a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer and a conductive structure sequentially formed thereon. The first insulating layer has a first opening communicated with a through hole of the substrate. The first conductive layer includes a first ring pattern extending from top of the first insulating layer into the first opening. The second insulating layer has a second opening communicated with the first opening. The second conductive layer includes a second ring pattern extending from top of the second insulating layer into the second opening. The first ring pattern laterally protrudes toward an axis of the through hole from the second ring pattern. The conductive structure extends from above the second insulating layer to a bottom surface of the substrate through the first and second openings and the through hole.