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Patent Agency Ranking
公开(公告)号：US11882733B2
公开(公告)日：2024-01-23
申请号：US17364896
申请日：2021-07-01
Applicant: Au Optronics Corporation
Inventor： Shuo-Yang Sun , Shih-Hua Hsu , Ching-Wen Chen , Ying-Hui Lai
IPC: H10K59/125 , H10K10/46 , H10K59/131
CPC classification number: H10K59/125 , H10K10/464 , H10K59/131
Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.
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公开(公告)号：US20220157911A1
公开(公告)日：2022-05-19
申请号：US17364877
申请日：2021-06-30
Applicant: Au Optronics Corporation
Inventor： Shuo-Yang Sun , Shih-Hua Hsu , Ching-Wen Chen , Ying-Hui Lai
Abstract: A semiconductor device is disposed and includes a substrate, on which a scan line, a data line, a source electrode, a drain electrode, an organic semiconductor pattern, an organic insulating layer, a gate electrode, and an organic protection layer are disposed. The source electrode is electrically connected to the data line. The organic semiconductor pattern is disposed between the source electrode and the drain electrode. The organic insulating layer is disposed on an upper surface and a side surface of the organic semiconductor pattern. The organic insulating layer is at least disposed between the side surface of the organic semiconductor pattern and the gate electrode and disposed between the upper surface of the organic semiconductor pattern and the gate electrode. The gate electrode is electrically connected to the scan line. The organic protection layer covers the gate electrode.
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公开(公告)号：US20220238621A1
公开(公告)日：2022-07-28
申请号：US17364896
申请日：2021-07-01
Applicant: Au Optronics Corporation
Inventor： Shuo-Yang Sun , Shih-Hua Hsu , Ching-Wen Chen , Ying-Hui Lai
Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.
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公开(公告)号：US10475826B2
公开(公告)日：2019-11-12
申请号：US15971086
申请日：2018-05-04
Applicant: AU OPTRONICS CORPORATION
Inventor： Shuo-Yang Sun , Yu-Hsing Liang , Wan-Chen Huang , Chun-Cheng Cheng
IPC: H01L27/00 , H01L29/00 , H01L27/12 , G02F1/1368 , H01L27/144 , H01L27/32
Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.
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公开(公告)号：US09278512B2
公开(公告)日：2016-03-08
申请号：US14167350
申请日：2014-01-29
Applicant: AU Optronics Corporation
Inventor： Shuo-Yang Sun , Wan-Chen Huang , Wei-Ting Lin , Chun-Cheng Cheng
CPC classification number: B32B38/10 , B32B37/1284 , B32B38/0004 , H01L21/6835 , H01L2221/68318 , H01L2221/6835 , H01L2221/68381
Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.
Abstract translation: 基板接合和剥离方法包括以下步骤：提供基板; 在所述基板的剥离区域上形成第一硅胶层，以及在所述基板的周边区域上形成第二硅胶层，其中所述第一和第二硅胶层在其中包含相同的硅氧烷主剂和硅氧烷固化剂 不同比例 将相对的基板粘附到第一和第二硅胶层上; 固化第一和第二硅胶层以将基底粘合到相对的基底上; 以及将衬底的一部分与相对衬底分离。
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