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Patent Agency Ranking
公开(公告)号：US20180232000A1
公开(公告)日：2018-08-16
申请号：US15955620
申请日：2018-04-17
Applicant: AVNERA CORPORATION
Inventor： Christopher D. Nilson
IPC: G05F3/16 , H03K17/687
CPC classification number: G05F3/16 , G05F1/468 , H03K17/687
Abstract: A start-up circuit for a bandgap reference voltage generator circuit, including a first native transistor with a drain connected to a supply voltage of the bandgap reference voltage generator circuit and a source connected to a gate of the first native transistor; a low voltage transistor with a source connected to ground, a drain connected to the source of the first native transistor, and a gate connected to a resistor; a second native transistor with a source connected to the resistor, a gate connected to the source of the first native transistor; a high voltage transistor with a drain connected to a drain of the second native transistor and a source connected to the supply voltage; and a transistor with a gate connected to the gate of the first high voltage transistor and a drain which provides a start-up current for the bandgap reference voltage generator circuit.
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公开(公告)号：US10261537B2
公开(公告)日：2019-04-16
申请号：US15955620
申请日：2018-04-17
Applicant: AVNERA CORPORATION
Inventor： Christopher D. Nilson
IPC: G05F1/46 , G05F3/16 , H03K17/687
Abstract: A start-up circuit for a bandgap reference voltage generator circuit, including a first native transistor with a drain connected to a supply voltage of the bandgap reference voltage generator circuit and a source connected to a gate of the first native transistor; a low voltage transistor with a source connected to ground, a drain connected to the source of the first native transistor, and a gate connected to a resistor; a second native transistor with a source connected to the resistor, a gate connected to the source of the first native transistor; a high voltage transistor with a drain connected to a drain of the second native transistor and a source connected to the supply voltage; and a transistor with a gate connected to the gate of the first high voltage transistor and a drain which provides a start-up current for the bandgap reference voltage generator circuit.
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公开(公告)号：US09520893B1
公开(公告)日：2016-12-13
申请号：US15067500
申请日：2016-03-11
Applicant: AVNERA CORPORATION
Inventor： Christopher D. Nilson
Abstract: A current-mode, digital-to-analog converter (DAC) configured to convert a digital word input having j bits to an analog signal. The DAC has 2j current sources, an output node, a current divider, a first switch, and a second switch. Each of the 2j current sources is configured to produce a current having a value I0. The current divider has a programmable divide ratio, d, where 1/d is between 0 and 1. The first switch is configured to selectively couple 2j−1 of the 2j current sources to the output node. One of the 2j current sources is not coupled to the output node. The second switch is configured to selectively couple each of the 2j current sources to the current divider. This architecture ensures that the fundamental transform of input code to output current always has a slope that does not change from positive to negative or from negative to positive.
Abstract translation: 电流模式的数模转换器（DAC），被配置为将具有j位的数字字输入转换为模拟信号。 DAC具有2j电流源，输出节点，分流器，第一开关和第二开关。 每个2j电流源被配置为产生具有值I0的电流。 电流分压器具有可编程分频比d，其中1 / d在0和1之间。第一开关被配置为选择性地将2j电流源的2j-1耦合到输出节点。 2j电流源中的一个未耦合到输出节点。 第二开关被配置为选择性地将2j电流源中的每一个耦合到电流分配器。 这种架构确保输入代码对输出电流的基本变换总是具有不会从正变化到负变化或从负变为正的斜率。
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公开(公告)号：US09946277B2
公开(公告)日：2018-04-17
申请号：US15078894
申请日：2016-03-23
Applicant: AVNERA CORPORATION
Inventor： Christopher D. Nilson
CPC classification number: G05F1/468
Abstract: A start-up circuit for a bandgap reference voltage generator circuit, including a first native transistor with a drain connected to a supply voltage of the bandgap reference voltage generator circuit and a source connected to a gate of the first native transistor; a low voltage transistor with a source connected to ground, a drain connected to the source of the first native transistor, and a gate connected to a resistor; a second native transistor with a source connected to the resistor, a gate connected to the source of the first native transistor; a high voltage transistor with a drain connected to a drain of the second native transistor and a source connected to the supply voltage; and a transistor with a gate connected to the gate of the first high voltage transistor and a drain which provides a start-up current for the bandgap reference voltage generator circuit.
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公开(公告)号：US20170277210A1
公开(公告)日：2017-09-28
申请号：US15078894
申请日：2016-03-23
Applicant: AVNERA CORPORATION
Inventor： Christopher D. Nilson
IPC: G05F1/46
CPC classification number: G05F1/468
Abstract: A start-up circuit for a bandgap reference voltage generator circuit, including a first native transistor with a drain connected to a supply voltage of the bandgap reference voltage generator circuit and a source connected to a gate of the first native transistor; a low voltage transistor with a source connected to ground, a drain connected to the source of the first native transistor, and a gate connected to a resistor; a second native transistor with a source connected to the resistor, a gate connected to the source of the first native transistor; a high voltage transistor with a drain connected to a drain of the second native transistor and a source connected to the supply voltage; and a transistor with a gate connected to the gate of the first high voltage transistor and a drain which provides a start-up current for the bandgap reference voltage generator circuit.
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