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1.发明授权Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay 有权用于覆盖计量的衍射，非周期性目标和检测总重叠的方法公开(公告)号：US07230704B2
公开(公告)日：2007-06-12
申请号：US10858691
申请日：2004-06-02
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G01N21/4788
摘要： A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.
摘要翻译： 用于测量半导体晶片中覆盖层的方法包括其中分析一系列校准样本的校准阶段。 每个校准样品具有已知小于预定极限的覆盖层。 对于每个校准样品，获得一对反射对称覆盖目标的差分谱。 然后组合差分谱以定义总重叠指示符。 在随后的实际晶片测量中，将差分光谱与覆盖指示符进行比较，以检测总重叠的情况。
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公开(公告)号：US20060146321A1
公开(公告)日：2006-07-06
申请号：US11364709
申请日：2006-02-28
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
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公开(公告)号：US07095496B2
公开(公告)日：2006-08-22
申请号：US10317898
申请日：2002-12-12
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
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4.发明授权Overlay metrology method and apparatus using more than one grating per measurement direction 有权覆盖测量方法和装置每测量方向使用多个光栅公开(公告)号：US07170604B2
公开(公告)日：2007-01-30
申请号：US10613378
申请日：2003-07-03
IPC分类号： G01B11/00 , G03F9/00 , G03C5/00 , H01L23/544 , H01L21/76
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/24 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An overlay target includes two pairs of test patterns used to measure overlay in x and y directions, respectively. Each test pattern includes upper and lower grating layers. A single pitch (periodic spacing) is used for all gratings. Within each test pattern, the upper and lower grating layers are laterally offset from each other to define an offset bias. Each pair of test patterns has offset biases that differ by the grating pitch/4. This has the important result that the combined optical response of the test patterns is sensitive to overlay for all values of overlay. An algorithm obtains overlay and other physical properties of the two or more test patterns from their optical responses in one combined regression operation.
摘要翻译： 覆盖目标包括两对测试模式，分别用于测量x和y方向上的覆盖。 每个测试图案包括上和下光栅层。 所有光栅都使用单个间距（周期性间隔）。 在每个测试图案中，上和下光栅层彼此横向偏移以限定偏移偏移。 每对测试图案具有由光栅间距/ 4不同的偏移偏移。 这具有重要的结果，测试图案的组合光学响应对于所有覆盖值都对覆盖敏感。 在一个组合回归操作中，算法从它们的光学响应中获得两个或更多个测试模式的覆盖和其他物理特性。
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公开(公告)号：US20060164632A1
公开(公告)日：2006-07-27
申请号：US11364312
申请日：2006-02-28
IPC分类号： G01N21/01
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
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公开(公告)号：US20050018190A1
公开(公告)日：2005-01-27
申请号：US10917219
申请日：2004-08-12
IPC分类号： G03F7/20 , H01L23/544 , G01B11/00
CPC分类号： G03F7/70633 , H01L22/34 , H01L2223/54453
摘要： Alignment accuracy between two or more patterned layers is measured using a metrology target comprising substantially overlapping diffraction gratings formed in a test area of the layers being tested. An optical instrument illuminates all or part of the target area and measures the optical response. The instrument can measure transmission, reflectance, and/or ellipsometric parameters as a function of wavelength, polar angle of incidence, azimuthal angle of incidence, and/or polarization of the illumination and detected light. Overlay error or offset between those layers containing the test gratings is determined by a processor programmed to calculate an optical response for a set of parameters that include overlay error, using a model that accounts for diffraction by the gratings and interaction of the gratings with each others' diffracted field. The model parameters might also take account of manufactured asymmetries. The calculation may involve interpolation of pre-computed entries from a database accessible to the processor. The calculated and measured responses are iteratively compared and the model parameters changed to minimize the difference.
摘要翻译： 使用包括在被测试层的测试区域中形成的基本上重叠的衍射光栅的测量目标来测量两个或更多个图案化层之间的对准精度。 光学仪器照亮目标区域的全部或部分，并测量光学响应。 仪器可以测量作为波长，极角入射角，入射方位角和/或照明和检测光的偏振的函数的透射率，反射率和/或椭偏参数。 包含测试光栅的那些层之间的叠加误差或偏移量被编程为使用考虑光栅衍射的模型和光栅与彼此的相互作用计算包括重叠误差的一组参数的光学响应的处理器来确定 '衍射场 模型参数也可能考虑到制造的不对称性。 该计算可以包括从处理器可访问的数据库插入预先计算的条目。 迭代比较计算和测量的响应，改变模型参数以最小化差异。
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7.发明授权Overlay metrology method and apparatus using more than one grating per measurement direction 有权覆盖测量方法和装置每测量方向使用多个光栅公开(公告)号：US07333200B2
公开(公告)日：2008-02-19
申请号：US11635878
申请日：2006-12-08
IPC分类号： G01B11/00 , G01B11/04 , G01B11/08 , G01B11/24 , G01B11/28 , G01J4/00 , G01N21/55 , G03C5/00 , G03F9/00 , H01L23/544 , H01L21/76
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/24 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.
摘要翻译： 公开了一种控制用于在半导体晶片的层上制造图案的光刻工艺的方法。 该方法包括提供至少两个散射测量目标，每个目标具有形成在与形成在下层中的第二图案基本对准的上层中的第一图案。 目标被光学检查。 创建每个目标的理论模型，其中每个模型包括定义目标的多个未知参数，并且其中至少一个参数对于每个目标共同。 进行回归分析，其中将所测量的目标的光学响应与通过改变应用于模型的参数的值产生的计算的光学响应进行比较。 在回归分析期间，维持常用参数的公用值。 结果用于控制光刻工艺。
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8.发明授权公开(公告)号：US07224450B2
公开(公告)日：2007-05-29
申请号：US11364312
申请日：2006-02-28
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
摘要翻译： 描述了适用于高精度和高精度表面测量测量的校准方法。 在优选实施例中，包括可移动光学系统的光学检查工具的特征在于在运动范围上的位置和波长相关量。 一旦在各种波长和位置确定位置相关量，就将它们存储并用于从具有未知计量学的测试晶片中解释数据。 没有与位置相关的变化和与测量系统相关的其他信息，所得到的晶片测量的精度与现有技术的精度更接近。 在特定实施例中，通过使用倾斜的黑色玻璃来提供非反射参考来实现光学系统的表征的一部分。
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公开(公告)号：US07215419B2
公开(公告)日：2007-05-08
申请号：US11364709
申请日：2006-02-28
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
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10.发明申请Overlay metrology method and apparatus using more than one grating per measurement direction 有权覆盖测量方法和装置每测量方向使用多个光栅公开(公告)号：US20070081170A1
公开(公告)日：2007-04-12
申请号：US11635878
申请日：2006-12-08
IPC分类号： G01B11/14
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/24 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.
摘要翻译： 公开了一种控制用于在半导体晶片的层上制造图案的光刻工艺的方法。 该方法包括提供至少两个散射测量目标，每个目标具有形成在与形成在下层中的第二图案基本对准的上层中的第一图案。 目标被光学检查。 创建每个目标的理论模型，其中每个模型包括定义目标的多个未知参数，并且其中至少一个参数对于每个目标共同。 进行回归分析，其中将所测量的目标的光学响应与通过改变应用于模型的参数的值产生的计算的光学响应相比较。 在回归分析期间，维持常用参数的公用值。 结果用于控制光刻工艺。
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