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1.发明授权Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay 有权用于覆盖计量的衍射，非周期性目标和检测总重叠的方法公开(公告)号：US07230704B2
公开(公告)日：2007-06-12
申请号：US10858691
申请日：2004-06-02
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G01N21/4788
摘要： A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.
摘要翻译： 用于测量半导体晶片中覆盖层的方法包括其中分析一系列校准样本的校准阶段。 每个校准样品具有已知小于预定极限的覆盖层。 对于每个校准样品，获得一对反射对称覆盖目标的差分谱。 然后组合差分谱以定义总重叠指示符。 在随后的实际晶片测量中，将差分光谱与覆盖指示符进行比较，以检测总重叠的情况。
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2.发明授权公开(公告)号：US07743358B2
公开(公告)日：2010-06-22
申请号：US11203498
申请日：2005-08-13
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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公开(公告)号：US20060248497A1
公开(公告)日：2006-11-02
申请号：US11203329
申请日：2005-08-13
IPC分类号： G06F17/50
摘要： An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.
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4.发明授权Apparatus and method for characterizing an image system in lithography projection tool 有权用于表征光刻投影工具中的图像系统的装置和方法公开(公告)号：US07379170B2
公开(公告)日：2008-05-27
申请号：US11203331
申请日：2005-08-13
IPC分类号： G01B9/00
CPC分类号： G03F7/706
摘要： A system and method for characterizing an imaging system causes a diffraction image indicative of a test structure having a generalized line-grating to be formed and then extracts from a measurement of the diffraction image a lens transmittance function, a photoresist property or a defocus distance.
摘要翻译： 用于表征成像系统的系统和方法使得将形成指示具有广义线光栅的测试结构的衍射图像，然后从衍射图像的测量中提取透镜透射函数，光致抗蚀剂性质或散焦距离。
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5.发明授权Measurement of overlay using diffraction gratings when overlay exceeds the grating period 有权当覆盖层超过光栅周期时，使用衍射光栅测量覆盖层公开(公告)号：US07193715B2
公开(公告)日：2007-03-20
申请号：US10714460
申请日：2003-11-14
IPC分类号： G01B11/00 , G03F9/00 , G03C5/00 , H01L23/544 , H01L21/76
CPC分类号： G03F7/70633 , G01N21/4788 , G01N21/956
摘要： A method for measuring overlay in semiconductor wafers includes obtaining diffraction based and imaging based measurements of the same target. The two separate measurements are then combined in a way that is consistent to both measurements to obtain an overlay measurement that has high precision and large range.
摘要翻译： 用于测量半导体晶片中覆盖层的方法包括获得相同目标的基于衍射和基于成像的测量。 然后将两个单独的测量结合到与两个测量一致的方式以获得具有高精度和大范围的覆盖测量。
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6.发明申请Apparatus and method for characterizing an image system in lithography projection tool 有权用于表征光刻投影工具中的图像系统的装置和方法公开(公告)号：US20060251994A1
公开(公告)日：2006-11-09
申请号：US11203331
申请日：2005-08-13
IPC分类号： G03C5/00
CPC分类号： G03F7/706
摘要： A system and method for characterizing an imaging system causes a diffraction image indicative of a test structure having a generalized line-grating to be formed and then extracts from a measurement of the diffraction image a lens transmittance function, a photoresist property or a defocus distance.
摘要翻译： 用于表征成像系统的系统和方法使得将形成指示具有广义线光栅的测试结构的衍射图像，然后从衍射图像的测量中提取透镜透射函数，光致抗蚀剂性质或散焦距离。
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7.发明授权公开(公告)号：US08122389B2
公开(公告)日：2012-02-21
申请号：US12690791
申请日：2010-01-20
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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公开(公告)号：US07519940B2
公开(公告)日：2009-04-14
申请号：US11203329
申请日：2005-08-13
摘要： An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.
摘要翻译： 一种用于补偿投影光刻工具中的透镜缺陷的装置和方法，包括从投影光刻工具产生的衍射图像中提取透镜透射函数，然后使用提取的透镜透射函数作为光刻投影工具中的补偿器。 合成光掩模图案的另一优选装置和方法包括获得成像系统的透射率函数的相位和幅度; 形成包括成像系统的透射功能的图案化计算模型; 然后通过最小化计算模型预测在晶片上形成合成的掩模图案的另一图案之间的差异来合成来自给定目标图案的掩模图案。
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公开(公告)号：US20050012928A1
公开(公告)日：2005-01-20
申请号：US10858587
申请日：2004-06-02
CPC分类号： G03F7/70633 , G01B11/26 , G01J3/2823
摘要： A method for measuring overlay in a sample includes obtaining an image of an overlay target that includes a series of grating stacks each having an upper and lower grating, each grating stack having a unique offset between its upper and lower grating. The image is obtained with a set of illumination and collection optics where the numerical aperture of the collection optics is larger than the numerical aperture of the illumination optics and with the numerical apertures of the illumination and collection optics are selected so that the unit cells of gratings are not resolved, the grating stacks are resolved and they appear to have a uniform color within the image of the overlay target.
摘要翻译： 用于测量样本中覆盖层的方法包括获得包括一系列具有上和下光栅的一系列光栅堆叠的覆盖目标的图像，每个光栅堆叠在其上和下光栅之间具有唯一的偏移。 利用一组照明和收集光学器件获得图像，其中收集光学器件的数值孔径大于照明光学器件的数值孔径，并且选择照明和收集光学器件的数值孔径，使得光栅的单元电池 没有解决，光栅堆栈被解决，并且它们在覆盖目标的图像内看起来具有均匀的颜色。
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公开(公告)号：US08279409B1
公开(公告)日：2012-10-02
申请号：US12536425
申请日：2009-08-05
申请人： Abdurrahman Sezginer , Hsu-Ting Huang , Jesus Orsely Carrero , Tatung Chow , Kostyantyn Chuyeshov , Gokhan Percin
发明人： Abdurrahman Sezginer , Hsu-Ting Huang , Jesus Orsely Carrero , Tatung Chow , Kostyantyn Chuyeshov , Gokhan Percin
CPC分类号： G03F1/70 , G03F1/36 , G03F7/70441 , G03F7/705 , G03F7/70516
摘要： The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.
摘要翻译： 本发明提供了一种用于通过使用在晶片的位置处的强度测量来计算缺点函数来校准光刻处理的计算模型的方法; 并通过使用计算的缺点函数确定计算模型的参数值来校准光刻模型或掩模制作模型。 该方法还可以使用由晶片上的特征的模拟和测量的临界尺寸之间的差的平方和定义的第二缺点函数。
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