摘要:
Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
摘要:
A semiconductor liquid junction photocell using a photoactive electrode comprising GaAs has greatly improved solar energy to electrically conversion efficiency when compared to prior art semiconductor liquid junction photocells using GaAs electrodes. The improved efficiency is obtained by material, such as ruthenium, cobalt, rhodium or lead, on the electrode surface. Efficiency is still further increased by texturizing the surface of the GaAs electrode prior to addition of the material. Efficiencies under AM1 conditions are approximately 12 percent.
摘要:
This invention concerns novel fluorescent compositions having the potential for absorption of visible and UV radiation and for re-emitting the radiation at longer wavelengths. The compositions comprise rare earth chelates containing a phenalenone nucleus.
摘要:
A process for etching with a scanning tunneling microscope on both a single crystal and a thin film of high temperature superconductor is disclosed.