Semiconductor liquid junction photocell using surface modified GaAs
electrode
    2.
    发明授权
    Semiconductor liquid junction photocell using surface modified GaAs electrode 失效
    半导体液晶光电池使用表面改性GaAs电极

    公开(公告)号:US4182796A

    公开(公告)日:1980-01-08

    申请号:US907396

    申请日:1978-05-18

    CPC分类号: H01L31/04 H01G9/20 Y02E10/542

    摘要: A semiconductor liquid junction photocell using a photoactive electrode comprising GaAs has greatly improved solar energy to electrically conversion efficiency when compared to prior art semiconductor liquid junction photocells using GaAs electrodes. The improved efficiency is obtained by material, such as ruthenium, cobalt, rhodium or lead, on the electrode surface. Efficiency is still further increased by texturizing the surface of the GaAs electrode prior to addition of the material. Efficiencies under AM1 conditions are approximately 12 percent.

    摘要翻译: 与使用GaAs电极的现有技术的半导体液晶光电池相比,使用包含GaAs的光电极的半导体液体结型光电池与太阳能相比具有极大地改善的电转换效率。 通过在电极表面上的诸如钌,钴,铑或铅的材料获得改进的效率。 在添加材料之前,通过对GaAs电极的表面进行纹理化来进一步提高效率。 AM1条件下的效率约为12%。