摘要:
Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.
摘要:
Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.
摘要:
Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.
摘要:
Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.
摘要:
Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.
摘要:
An electronic device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having a concentric control structure comprising at least an inner and an outermost electrode, the optical cavity being controlled only by the inner electrode.
摘要:
An electronic device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having a concentric control structure comprising at least an inner and an outermost electrode, the optical cavity being controlled only by the inner electrode.
摘要:
Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.
摘要:
An electronic light modulator device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having at least first and second optical states, at least one of the optical states being tunable and the other not tunable.
摘要:
A light modulator device includes a bottom charge plate, a top charge plate, and a pixel plate supported by at least one flexure, wherein the flexure is a piece-wise linear flexure.