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27 条记录 (耗时 0.025 秒)

    Acoustic pressure transducer
    2.
    发明授权
    Acoustic pressure transducer 有权
    声压传感器

    公开(公告)号：US08705774B2

    公开(公告)日：2014-04-22

    申请号：US13123040

    申请日：2009-01-14

    申请人： Adel Jilani ,  James McKinnell ,  Brian Homeijer ,  Jennifer Wu ,  Melinda Valencia

    发明人： Adel Jilani ,  James McKinnell ,  Brian Homeijer ,  Jennifer Wu ,  Melinda Valencia

    IPC分类号： H04R25/00

    CPC分类号： H04R17/02 ,  H04R21/02 ,  H04R2201/003

    摘要： Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.

    摘要翻译： 提供声学传感器装置。 单片半导体层限定板，一对相对设置的扭转铰链，柔性延伸部和支撑结构的至少一部分。 与板连通的声压导致柔性延伸部的拉伸应变。 灵活的延伸提供响应于拉伸应变的变化的电特性。 可以从柔性延伸部的变化的电特性导出对应于声压的电信号。

    Acoustic energy transducer
    3.
    发明授权
    Acoustic energy transducer 有权
    声能传感器

    公开(公告)号：US08737663B2

    公开(公告)日：2014-05-27

    申请号：US13140329

    申请日：2009-01-27

    申请人： Adel Jilani ,  James McKinnell ,  Jennifer Wu ,  Melinda Valencia

    发明人： Adel Jilani ,  James McKinnell ,  Jennifer Wu ,  Melinda Valencia

    IPC分类号： H04R1/02

    CPC分类号： H04R17/02 ,  H04R21/02 ,  H04R2201/003

    摘要： Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.

    摘要翻译： 提供说明性的声学换能器。 单片半导体层限定板，两个或更多个柔性延伸部和支撑结构的至少一部分。 转移到板上的声压导致柔性延伸部的拉伸应变。 柔性延伸部显示响应于拉伸应变的变化的电特性。 可以从变化的电特性导出对应于声压的电信号，并进行处理以供进一步使用。

    ACOUSTIC ENERGY TRANSDUCER
    4.
    发明申请
    ACOUSTIC ENERGY TRANSDUCER 有权
    声音能量传感器

    公开(公告)号：US20110249853A1

    公开(公告)日：2011-10-13

    申请号：US13140329

    申请日：2009-01-27

    申请人： Adel Jilani ,  James Mckinnell ,  Jennifer Wu ,  Melinda Valencia

    发明人： Adel Jilani ,  James Mckinnell ,  Jennifer Wu ,  Melinda Valencia

    IPC分类号： H04R1/00

    CPC分类号： H04R17/02 ,  H04R21/02 ,  H04R2201/003

    摘要： Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.

    摘要翻译： 提供说明性的声学换能器。 单片半导体层限定板，两个或更多个柔性延伸部和支撑结构的至少一部分。 转移到板上的声压导致柔性延伸部的拉伸应变。 柔性延伸部显示响应于拉伸应变的变化的电特性。 可以从变化的电特性导出对应于声压的电信号，并进行处理以供进一步使用。

    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
    5.
    发明授权
    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
    采用自对准整流元件的纳米级存储器件及其制造方法

    公开(公告)号：US07335579B2

    公开(公告)日：2008-02-26

    申请号：US11331697

    申请日：2006-01-12

    申请人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    发明人： James Stasiak ,  Kevin F Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    IPC分类号： H01L21/20

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/24 ,  Y10S977/887 ,  Y10S977/94

    摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

    摘要翻译： 一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。 每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。 每个器件结构具有小于约75纳米的至少一个横向尺寸。 存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。 此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

    Cooling system for a work machine
    6.
    发明申请
    Cooling system for a work machine 审中-公开
    工作机冷却系统

    公开(公告)号：US20070089874A1

    公开(公告)日：2007-04-26

    申请号：US11584911

    申请日：2006-10-23

    申请人： John Tuntland ,  Ronald Dupree ,  Sean Johnson ,  Deepak Tiwari ,  Roland Weisman ,  Jennifer Wu ,  Eugene Zueck

    发明人： John Tuntland ,  Ronald Dupree ,  Sean Johnson ,  Deepak Tiwari ,  Roland Weisman ,  Jennifer Wu ,  Eugene Zueck

    IPC分类号： F01P1/06 ,  G05D15/00

    CPC分类号： F28F9/0234 ,  F28F9/22 ,  F28F2009/224

    摘要： A cooling system for a work machine may comprise a reservoir configured to hold a supply of fluid, a source of pressurized fluid and a valve configured to receive the pressurized fluid from the source of pressurized fluid. A first working unit and a second working unit may be connected to the valve in parallel. One of The first and second working units may be adapted to receive pressurized fluid on a priority basis from the valve. The first and second working units may be fluidly connected to the reservoir by a circulation conduit and may be connected to a first heat exchanger by a bypass conduit. The bypass conduit may be configured to pass only a portion of the fluid flow to be passed from the first and second working units to the first heat exchanger. The first heat exchanger may be fluidly connected to the reservoir and may be adapted to pass the portion of the fluid flow to the reservoir.

    摘要翻译： 用于作业机器的冷却系统可以包括构造成保持流体供应源，加压流体源和被配置为从加压流体源接收加压流体的阀的储存器。 第一工作单元和第二工作单元可以并联连接到阀。 第一和第二工作单元之一可以适于从阀门优先接收加压流体。 第一和第二工作单元可以通过循环管道流体地连接到储存器，并且可以通过旁路管道连接到第一热交换器。 旁通管道可以被配置为仅将待通过的流体流的一部分从第一和第二工作单元传递到第一热交换器。 第一热交换器可以流体地连接到储存器并且可以适于将流体流的一部分传递到储存器。

    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making
    8.
    发明申请
    Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making 失效
    采用自对准整流元件的纳米级存储器件及其制造方法

    公开(公告)号：US20060128129A1

    公开(公告)日：2006-06-15

    申请号：US11331697

    申请日：2006-01-12

    申请人： James Stasiak ,  Kevin Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    发明人： James Stasiak ,  Kevin Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

    IPC分类号： H01L21/20

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/24 ,  Y10S977/887 ,  Y10S977/94

    摘要： A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

    摘要翻译： 一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。 每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。 每个器件结构具有小于约75纳米的至少一个横向尺寸。 存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。 此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。