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公开(公告)号:US09824892B2
公开(公告)日:2017-11-21
申请号:US13812089
申请日:2012-05-17
申请人: Adrian Kitai , Haoling Yu , Bo Li
发明人: Adrian Kitai , Haoling Yu , Bo Li
CPC分类号: H01L21/02634 , C30B9/10 , C30B19/12 , C30B29/06 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02625 , H01L21/02628 , H01L21/02645 , H01L21/02658 , H01L29/0657
摘要: A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
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公开(公告)号:US20130119518A1
公开(公告)日:2013-05-16
申请号:US13812089
申请日:2012-05-17
申请人: Adrian Kitai , Haoling Yu , Bo Li
发明人: Adrian Kitai , Haoling Yu , Bo Li
CPC分类号: H01L21/02634 , C30B9/10 , C30B19/12 , C30B29/06 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02625 , H01L21/02628 , H01L21/02645 , H01L21/02658 , H01L29/0657
摘要: A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
摘要翻译: 描述了通过横向扩散液相外延生长半导体晶片的方法。 还提供了用于实施所公开的方法的耐火设备和通过所公开的方法和设备制备的半导体晶片。 所公开的方法和装置允许相对于当前的半导体生产技术节省大量成本和材料浪费。
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