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公开(公告)号：US20110024766A1
公开(公告)日：2011-02-03
申请号：US12772254
申请日：2010-05-03
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： H01L29/24
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译： 公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法 晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。
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公开(公告)号：US08147991B2
公开(公告)日：2012-04-03
申请号：US12772254
申请日：2010-05-03
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： B32B19/00 , H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译： 公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法 晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。
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公开(公告)号：US08384090B2
公开(公告)日：2013-02-26
申请号：US11940454
申请日：2007-11-15
IPC分类号： H01L29/24
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
摘要翻译： 公开了具有至少约3英寸的直径和小于约2000cm-2的1c螺旋位错密度的SiC的高质量单晶晶片。
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公开(公告)号：US07316747B2
公开(公告)日：2008-01-08
申请号：US11248579
申请日：2005-10-12
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译： 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。
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公开(公告)号：US07314520B2
公开(公告)日：2008-01-01
申请号：US10957806
申请日：2004-10-04
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.
摘要翻译： 公开了一种高质量的SiC晶圆，其直径至少为约3英寸，螺旋位错密度小于约2000cm -2。
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公开(公告)号：US07294324B2
公开(公告)日：2007-11-13
申请号：US11147645
申请日：2005-06-08
申请人： Adrian Powell , Mark Brady , Valeri F. Tsvetkov
发明人： Adrian Powell , Mark Brady , Valeri F. Tsvetkov
IPC分类号： C01B33/36
CPC分类号： C30B33/00 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/0254 , H01L29/66068
摘要： A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2 for a 4 degree off-axis wafer.
摘要翻译： 公开了一种高质量的SiC晶圆。 该晶片具有至少约3英寸（75mm）的直径和至少一个具有小于约500的基面位错体积密度的表面积的连续平方英寸（6.25cm 2/2） 用于4度离轴晶片的cm -2。
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公开(公告)号：US07563321B2
公开(公告)日：2009-07-21
申请号：US11006997
申请日：2004-12-08
摘要： The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.
摘要翻译： 本发明是在种子升华系统中生产高质量的碳化硅单晶的方法的改进。 在第一实施例中，改进包括通过在最初的一（1）毫米晶体生长中引入高浓度的氮原子来减少生长晶体中的宏步数。
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公开(公告)号：US20080169476A1
公开(公告)日：2008-07-17
申请号：US11940454
申请日：2007-11-15
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm 2.
摘要翻译： 公开了具有至少约3英寸的直径和小于约2000cm 2的1c螺旋位错密度的SiC的高质量单晶晶片。
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公开(公告)号：US09790619B2
公开(公告)日：2017-10-17
申请号：US13181167
申请日：2011-07-12
IPC分类号： C30B23/02 , C30B29/36 , C30B23/00 , C30B33/00 , H01L21/324
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
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10.发明授权Seed and seedholder combinations for high quality growth of large silicon carbide single crystals 有权种子和种子组合，用于高质量生长的大型碳化硅单晶公开(公告)号：US07364617B2
公开(公告)日：2008-04-29
申请号：US11671015
申请日：2007-02-05
IPC分类号： C30B11/14
CPC分类号： C30B23/005 , C30B29/36 , Y10S117/911 , Y10T117/10 , Y10T117/1032
摘要： A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.
摘要翻译： 公开了一种碳化硅种子升华方法。 该方法包括以下步骤：在籽晶的（0001）面离轴离开约1°至10°之间的晶种生长面上成长生长，同时在晶种和源组成之间建立热梯度， 基本上垂直于离轴晶体的基面。
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