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    Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
    7.
    发明授权
    Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
    在含有氢气的环境中生长超高纯碳化硅晶体

    公开(公告)号：US07147715B2

    公开(公告)日：2006-12-12

    申请号：US10628189

    申请日：2003-07-28

    申请人： David Phillip Malta ,  Jason Ronald Jenny ,  Hudson McDonald Hobgood ,  Valeri F. Tsvetkov

    发明人： David Phillip Malta ,  Jason Ronald Jenny ,  Hudson McDonald Hobgood ,  Valeri F. Tsvetkov

    IPC分类号： C30B25/12 ,  C30B25/14

    CPC分类号： C30B23/00 ,  C30B29/36

    摘要： A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.

    摘要翻译： 公开了一种制备具有受控氮含量的半绝缘碳化硅晶体的方法。 该方法包括以下步骤：将含有氢气的环境气体引入升华生长室，将碳化硅源粉末加热到氢气环境生长室中升华，同时加热然后将氢气环境生长室中的碳化硅晶种维持在 低于源粉末的温度的第二温度，来自源粉末的第二温度升华物质将在晶种上冷凝，继续加热碳化硅源粉末，直到种子发生所需量的碳化硅晶体生长 晶体，同时保持生长室中的氢气的环境浓度足以使结合到生长的碳化硅晶体中的氮的量最小化，并且在升华过程中保持源粉末和晶种在相应的温度下足够高以增加数量 在生长晶体中的点缺陷 达到使所得碳化硅晶体半绝缘的量。

    Method for producing semi-insulating resistivity in high purity silicon carbide crystals
    9.
    发明授权
    Method for producing semi-insulating resistivity in high purity silicon carbide crystals 有权
    在高纯度碳化硅晶体中生产半绝缘电阻率的方法

    公开(公告)号：US06814801B2

    公开(公告)日：2004-11-09

    申请号：US10064232

    申请日：2002-06-24

    申请人： Jason Ronald Jenny ,  David Phillip Malta ,  Hudson McDonald Hobgood ,  Stephan Mueller ,  Valeri F. Tsvetokov

    发明人： Jason Ronald Jenny ,  David Phillip Malta ,  Hudson McDonald Hobgood ,  Stephan Mueller ,  Valeri F. Tsvetokov

    IPC分类号： C30B3302

    CPC分类号： H01L21/324 ,  C30B29/36 ,  C30B33/00

    摘要： A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states to a temperature above the temperatures required for CVD growth of silicon carbide from source gases, but less than the sublimation temperature of silicon carbide under the ambient conditions to thereby thermodynamically increase the number of point defects and resulting states in the crystal, and then cooling the heated crystal to approach room temperature at a sufficiently rapid rate to maintain a concentration of point defects in the cooled crystal that remains greater than the first concentration.

    摘要翻译： 公开了一种在没有相关量的深层捕获元件的情况下生产高质量半绝缘碳化硅晶体的方法。 本发明包括以下步骤：将具有与点缺陷有关的深层次状态的第一浓度的碳化硅晶体加热到高于来自源气体的碳化硅的CVD生长所需温度的温度，但小于碳化硅的升华温度 从而热力学地增加晶体中的点缺陷数量和结果状态，然后以足够快的速率将加热的晶体冷却至接近室温，以保持冷却的晶体中的点缺陷的浓度保持大于第一 浓度。