公开(公告)号：US20170125211A1

公开(公告)日：2017-05-04

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  B08B7/00 ,  H01J37/304 ,  H02N13/00

CPC classification number: H01J37/30 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/30466 ,  H01L21/6833 ,  H02N13/00

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US11062926B2

公开(公告)日：2021-07-13

申请号：US16593835

申请日：2019-10-04

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US10475678B2

公开(公告)日：2019-11-12

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US10699876B2

公开(公告)日：2020-06-30

申请号：US15297551

申请日：2016-10-19

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Yu-Ho Ni ,  Chun-Chin Kang ,  Chieh-Jen Yang

IPC: H01J37/30 ,  H01J37/20 ,  H01L21/683 ,  B08B7/00 ,  H02N13/00 ,  H01J37/304

Abstract: A method of cleaning an electrostatic chuck (ESC) is disclosed. An ion beam is delivered to a work surface of an ESC where no workpiece is held. The interaction between the ion beam and the depositions on the work surface may remove the depositions away the ESC, no matter the interaction is physical bombardment and/or chemical reaction. Hence, the practical chucking force between the ESC and the held workpiece may be less affected by the depositions formed on the work surface during the period of holding no workpiece, no matter the photoresist dropped away the workpiece and/or the particles inside the process chamber. Depends on the details of the depositions, such as the structure, the thickness and the material, the details of ion beam may be correspondingly adjusted, such as the ion beam current, the ion beam energy and the kinds of ions. For example, a low energy ion beam may be used to reduce the potential damages on work surface of the ESC. For example, both the oxygen and the inert gas may be used to generate the ion beam for removing the depositions and protecting the dielectric layer inside the work surface of the ESC.

公开(公告)号：US20180330973A1

公开(公告)日：2018-11-15

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66 ,  H01L21/265

CPC classification number: H01L21/67253 ,  H01L21/265 ,  H01L21/6831 ,  H01L22/14 ,  H01L22/20

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.