Refresh management for DRAM
    2.
    发明授权

    公开(公告)号:US11561862B2

    公开(公告)日:2023-01-24

    申请号:US16887904

    申请日:2020-05-29

    Abstract: A memory controller interfaces with a dynamic random access memory (DRAM). The memory controller selectively places memory commands in a memory interface queue, and transmits the commands from the memory interface queue to a memory channel connected to at least one dynamic random access memory (DRAM). The transmitted commands are stored in a replay queue. A number of activate commands to a memory region of the DRAM is counted. Based on this count, a refresh control circuit signals that an urgent refresh command should be sent to the memory region. In response to detecting a designated type of error, a recovery sequence initiates to re-transmit memory commands from the replay queue. Designated error conditions can cause the recovery sequence to restart. If an urgent refresh command is pending when such a restart occurs, the recovery sequence is interrupted to allow the urgent refresh command to be sent.

    Error recovery for non-volatile memory modules

    公开(公告)号:US11531601B2

    公开(公告)日:2022-12-20

    申请号:US16729994

    申请日:2019-12-30

    Abstract: A memory controller includes a command queue, a memory interface queue, at least one storage queue, and a replay control circuit. The command queue has a first input for receiving memory access commands. The memory interface queue receives commands selected from the command queue and couples to a heterogeneous memory channel which is coupled to at least one non-volatile storage class memory (SCM) module. The at least one storage queue stores memory access commands that are placed in the memory interface queue. The replay control circuit detects that an error has occurred requiring a recovery sequence, and in response to the error, initiates the recovery sequence. In the recovery sequence, the replay control circuit transmits selected memory access commands from the at least one storage queue by grouping non-volatile read commands together separately from all pending volatile reads, volatile writes, and non-volatile writes.

    REFRESH MANAGEMENT FOR DRAM
    4.
    发明申请

    公开(公告)号:US20210374006A1

    公开(公告)日:2021-12-02

    申请号:US16887904

    申请日:2020-05-29

    Abstract: A memory controller interfaces with a dynamic random access memory (DRAM). The memory controller selectively places memory commands in a memory interface queue, and transmits the commands from the memory interface queue to a memory channel connected to at least one dynamic random access memory (DRAM). The transmitted commands are stored in a replay queue. A number of activate commands to a memory region of the DRAM is counted. Based on this count, a refresh control circuit signals that an urgent refresh command should be sent to the memory region. In response to detecting a designated type of error, a recovery sequence initiates to re-transmit memory commands from the replay queue. Designated error conditions can cause the recovery sequence to restart. If an urgent refresh command is pending when such a restart occurs, the recovery sequence is interrupted to allow the urgent refresh command to be sent.

    ERROR RECOVERY FOR NON-VOLATILE MEMORY MODULES

    公开(公告)号:US20210200649A1

    公开(公告)日:2021-07-01

    申请号:US16729994

    申请日:2019-12-30

    Abstract: A memory controller includes a command queue, a memory interface queue, at least one storage queue, and a replay control circuit. The command queue has a first input for receiving memory access commands. The memory interface queue receives commands selected from the command queue and couples to a heterogeneous memory channel which is coupled to at least one non-volatile storage class memory (SCM) module. The at least one storage queue stores memory access commands that are placed in the memory interface queue. The replay control circuit detects that an error has occurred requiring a recovery sequence, and in response to the error, initiates the recovery sequence. In the recovery sequence, the replay control circuit transmits selected memory access commands from the at least one storage queue by grouping non-volatile read commands together separately from all pending volatile reads, volatile writes, and non-volatile writes.

    Memory calibration system and method

    公开(公告)号:US12243576B2

    公开(公告)日:2025-03-04

    申请号:US18198709

    申请日:2023-05-17

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    MEMORY CALIBRATION SYSTEM AND METHOD
    9.
    发明公开

    公开(公告)号:US20230368832A1

    公开(公告)日:2023-11-16

    申请号:US18198709

    申请日:2023-05-17

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    Memory calibration system and method

    公开(公告)号:US11664062B2

    公开(公告)日:2023-05-30

    申请号:US16938855

    申请日:2020-07-24

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

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