Semiconductor device package
    2.
    发明授权

    公开(公告)号:US11328999B2

    公开(公告)日:2022-05-10

    申请号:US16706533

    申请日:2019-12-06

    Abstract: A semiconductor device package includes a lower-density substrate and a higher-density substrate. The higher-density substrate is attached to the lower-density substrate. The higher-density substrate has a first interconnection layer and a second interconnection layer disposed over the first interconnection layer. A thickness of the first interconnection layer is different from a thickness of the second interconnection layer.

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