公开(公告)号：US20210202349A1

公开(公告)日：2021-07-01

申请号：US16730400

申请日：2019-12-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En CHEN ,  Hung-Hsien HUANG ,  Shin-Luh TARNG

IPC: H01L23/373 ,  H01L23/498

Abstract: A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.

公开(公告)号：US20200118905A1

公开(公告)日：2020-04-16

申请号：US16156984

申请日：2018-10-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En CHEN

IPC: H01L23/367 ,  H01L23/40 ,  F28F13/06

Abstract: A conductive lid includes a body including a first portion extended from the body and bent toward a first direction; a second portion extended from the body and bent toward the first direction; and a third portion extended from the second portion and bent toward a second direction different from the first direction.

公开(公告)号：US20200266123A1

公开(公告)日：2020-08-20

申请号：US16717929

申请日：2019-12-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En CHEN ,  Ian HU ,  Jung-Che TSAI

IPC: H01L23/427 ,  H01L23/46 ,  H01L23/48

Abstract: A semiconductor package structure includes a package substrate and a semiconductor die. The package substrate includes a plurality of hollow vias extending through the package substrate. The semiconductor die is electrically connected to the package substrate. The hollow vias are disposed under the semiconductor die.

公开(公告)号：US20200091036A1

公开(公告)日：2020-03-19

申请号：US16566495

申请日：2019-09-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En CHEN ,  Ian HU ,  Jin-Feng YANG

IPC: H01L23/427 ,  H01L23/00

Abstract: A semiconductor package structure includes a package substrate, a semiconductor die, a vapor chamber and a heat dissipating device. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The vapor chamber is thermally connected to a first surface of the semiconductor die. The vapor chamber defines an enclosed chamber for accommodating a first working liquid. The heat dissipating device is thermally connected to the vapor chamber. The heat dissipating device defines a substantially enclosed space for accommodating a second working liquid.