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公开(公告)号:US20200296836A1
公开(公告)日:2020-09-17
申请号:US16351026
申请日:2019-03-12
Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Inventor: Yu-Ju LIAO , Chien-Fan CHEN , Chien-Hao WANG , I-Chia LIN
IPC: H05K1/18 , H01L21/48 , H01L23/498 , H01L23/00
Abstract: An embedded component package structure including a circuit substrate, an embedded component and a stress compensation layer is provided. The circuit substrate includes a core layer and an asymmetric circuit structure, and the core layer has a first thickness. The embedded component is disposed in the core layer. The stress compensation layer is disposed on one side of the core layer, and the stress compensation layer has a second thickness between 4 μm and 351 μm.
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公开(公告)号:US20180158783A1
公开(公告)日:2018-06-07
申请号:US15871805
申请日:2018-01-15
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: I-Chia LIN , Chieh-Chen FU , Kuo Hsien LIAO , Cheng-Nan LIN
IPC: H01L23/552
Abstract: A semiconductor device package includes: (1) a carrier; (2) an electronic component disposed over a top surface of the carrier; (3) a package body disposed over the top surface of the carrier and covering the electronic component; and (4) a shield layer, including a first magnetically permeable layer disposed over the package body, a first electrically conductive layer disposed over the first magnetically permeable layer, and a second magnetically permeable layer disposed over the first electrically conductive layer. The first electrically conductive layer is interposed between the first magnetically permeable layer and the second magnetically permeable layer. A permeability of the first electrically conductive layer is different from a permeability of the first magnetically permeable layer and a permeability of the second magnetically permeable layer.
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公开(公告)号:US20170200682A1
公开(公告)日:2017-07-13
申请号:US14990366
申请日:2016-01-07
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: I-Chia LIN , Chieh-Chen FU , Kuo Hsien LIAO , Cheng-Nan LIN
IPC: H01L23/552
CPC classification number: H01L23/552 , H01L21/561 , H01L24/97 , H01L2224/16227 , H01L2224/48091 , H01L2224/48227 , H01L2224/97 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/00014 , H01L2224/85 , H01L2224/81
Abstract: A semiconductor device package includes a carrier, an electronic component disposed over a top surface of the carrier, and a package body disposed over the top surface of the carrier and covering the electronic component. The semiconductor device package further includes a shield layer, which in turn includes a first electrically conductive layer, a first magnetically permeable layer, and a second electrically conductive layer, where the first magnetically permeable layer is interposed between and directly contacts the first electrically conductive layer and the second electrically conductive layer.
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