公开(公告)号：US20200235056A1

公开(公告)日：2020-07-23

申请号：US16254382

申请日：2019-01-22

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chia-Hao SUNG ,  Hsuan-Yu CHEN ,  Yu-Kai LIN

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

公开(公告)号：US20240170345A1

公开(公告)日：2024-05-23

申请号：US17989575

申请日：2022-11-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yu-Kai LIN ,  Chih-Cheng LEE

IPC: H01L21/66 ,  G01N3/24 ,  H01L21/48

CPC classification number: H01L22/12 ,  G01N3/24 ,  H01L21/4846

Abstract: A method of manufacturing a circuit pattern structure, a measurement method, and a circuit pattern structure are provided. The method of manufacturing the circuit pattern structure includes: forming a dielectric layer; forming at least one first pad at least partially in the dielectric layer; forming a second pad adjacent to the at least one first pad and having a height greater than that of the at least one first pad.

公开(公告)号：US20190206843A1

公开(公告)日：2019-07-04

申请号：US16297470

申请日：2019-03-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Li-Hao LYU ,  Chieh-Ju TSAI ,  Yu-Kai LIN ,  Wei-Ming HSIEH ,  Yu-Pin TSAI ,  Man-Wen TSENG ,  Yu-Ting LU

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/31 ,  H01L23/427 ,  H01L23/498 ,  H01L23/00 ,  H01L21/56 ,  H01L23/28

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/427 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06586 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2224/83

Abstract: A method for manufacturing a semiconductor device package includes: (1) providing a first encapsulation layer; (2) disposing an adhesive layer on the first encapsulation layer; (3) disposing a first die on the adhesive layer; and (4) forming a second encapsulation layer covering the first die, the adhesive layer, and the first encapsulation layer.

公开(公告)号：US20210288002A1

公开(公告)日：2021-09-16

申请号：US17336078

申请日：2021-06-01

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chia-Hao SUNG ,  Hsuan-Yu CHEN ,  Yu-Kai LIN

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

公开(公告)号：US20180061727A1

公开(公告)日：2018-03-01

申请号：US15675612

申请日：2017-08-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Li-Hao LYU ,  Chieh-Ju TSAI ,  Yu-Kai LIN ,  Wei-Ming HSIEH ,  Yu-Pin TSAI ,  Man-Wen TSENG ,  Yu-Ting LU

IPC: H01L23/28 ,  H01L23/498 ,  H01L23/427 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/427 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06586 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2224/83

Abstract: A semiconductor device package comprises an adhesive layer, a die on the adhesive layer, a first encapsulation layer encapsulating the die and the adhesive layer, and a second encapsulation layer adjacent to the first encapsulation layer and the adhesive layer. The second encapsulation layer has a first surface and a second surface different from the first surface. A contact angle of the first surface of the second encapsulation layer is different from a contact angle of the second surface of the second encapsulation layer.