公开(公告)号：US20190067181A1

公开(公告)日：2019-02-28

申请号：US16175426

申请日：2018-10-30

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Yuan-Fu SUNG ,  Shin-Hua CHAO ,  Ming-Chi LIU ,  Hung-Sheng CHEN

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A method of manufacturing a semiconductor package includes: (1) providing a first passivation layer on a carrier; (2) patterning the first passivation layer to define a first hole; (3) disposing a first seed layer on the first hole; (4) disposing a first conductive layer on the first seed layer; (5) replacing the carrier with a second passivation layer; (6) patterning the second passivation layer to define a second hole exposing the first seed layer; and (7) disposing a second conductive layer on the exposed first seed layer through the second hole.

公开(公告)号：US20180233443A1

公开(公告)日：2018-08-16

申请号：US15435143

申请日：2017-02-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yuan-Fu SUNG ,  Shin-Hua CHAO ,  Ming-Chi LIU ,  Hung-Sheng CHEN

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L2224/16235

Abstract: A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.