公开(公告)号：US10679860B2

公开(公告)日：2020-06-09

申请号：US15551821

申请日：2016-03-09

Applicant: Agency for Science, Technology and Research

Inventor： Lakshmi Kanta Bera ,  Yee Chong Loke ,  Surani Bin Dolmanan ,  Sudhiranjan Tripathy ,  Wai Hoe Tham

IPC: H01L29/66 ,  H01L21/285 ,  H01L29/51 ,  H01L29/20 ,  H01L29/778 ,  H01L21/28 ,  H01L29/205 ,  H01L29/40 ,  H01L29/45 ,  H01L29/49

Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.

公开(公告)号：US20180033631A1

公开(公告)日：2018-02-01

申请号：US15551821

申请日：2016-03-09

Applicant: Agency for Science, Technology and Research

Inventor： Lakshmi Kanta Bera ,  Yee Chong Loke ,  Surani Bin Dolmanan ,  Sudhiranjan Tripathy ,  Wai Hoe Tham

IPC: H01L21/285 ,  H01L29/205 ,  H01L29/40 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/452 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.