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Patent Agency Ranking
公开(公告)号：US20150316777A1
公开(公告)日：2015-11-05
申请号：US14648063
申请日：2013-11-29
Inventor： Beng Soon Tan , Chee Fatt Frank Chan , Yun Xu , Bee Khuan Jaslyn Law , Yee Chong Loke , Hong Yee Low
CPC classification number: G02B27/2214 , G02B3/0031
Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.
Abstract translation: 根据本发明的一个方面，提供了一种用双凸透镜阵列形成薄膜的方法，该方法包括提供基板; 提供具有多个纳米尺度至微尺度空腔的模具，其在基底上形成双凸透镜阵列; 使模具接触基板; 以及通过允许所述基底的部分部分地填充所述多个空腔来形成所述双凸透镜阵列。
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公开(公告)号：US10890783B2
公开(公告)日：2021-01-12
申请号：US16198386
申请日：2018-11-21
Inventor： Beng Soon Tan , Chee Fatt Frank Chan , Yun Xu , Bee Khuan Jaslyn Law , Yee Chong Loke , Hong Yee Low
Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.
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公开(公告)号：US20190094561A1
公开(公告)日：2019-03-28
申请号：US16198386
申请日：2018-11-21
Inventor： Beng Soon Tan , Chee Fatt Frank Chan , Yun Xu , Bee Khuan Jaslyn Law , Yee Chong Loke , Hong Yee Low
Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.
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公开(公告)号：US10679860B2
公开(公告)日：2020-06-09
申请号：US15551821
申请日：2016-03-09
Applicant: Agency for Science, Technology and Research
Inventor： Lakshmi Kanta Bera , Yee Chong Loke , Surani Bin Dolmanan , Sudhiranjan Tripathy , Wai Hoe Tham
IPC: H01L29/66 , H01L21/285 , H01L29/51 , H01L29/20 , H01L29/778 , H01L21/28 , H01L29/205 , H01L29/40 , H01L29/45 , H01L29/49
Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.
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公开(公告)号：US20180033631A1
公开(公告)日：2018-02-01
申请号：US15551821
申请日：2016-03-09
Applicant: Agency for Science, Technology and Research
Inventor： Lakshmi Kanta Bera , Yee Chong Loke , Surani Bin Dolmanan , Sudhiranjan Tripathy , Wai Hoe Tham
IPC: H01L21/285 , H01L29/205 , H01L29/40 , H01L21/28 , H01L29/49 , H01L29/51 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/45
CPC classification number: H01L21/28575 , H01L21/28264 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/452 , H01L29/4958 , H01L29/517 , H01L29/66462 , H01L29/7786 , H01L29/7787
Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.
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