利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.019 秒)

    Cleaning composition for semiconductor substrates
    7.
    发明授权
    Cleaning composition for semiconductor substrates 有权
    用于半导体衬底的清洁组合物

    公开(公告)号：US07879783B2

    公开(公告)日：2011-02-01

    申请号：US11652407

    申请日：2007-01-11

    申请人： Aiping Wu

    发明人： Aiping Wu

    IPC分类号： C11D7/50

    CPC分类号： C11D7/265 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/28 ,  C11D7/5022 ,  C11D11/0047

    摘要： The present invention relates to a semi-aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from semiconductor substrates. The cleaning composition comprises a buffering system comprising a polyprotic acid having at least three carboxylic acid groups with a pKa value of about 5 to about 7. The composition also comprises a polyhydric solvent, such as glycerol. A fluoride ion source is also included in the cleaning compositions of the present invention and is principally responsible for removing inorganic residues from the substrate. The cleaning compositions of the present invention have a low toxicity and are environmentally acceptable.

    摘要翻译： 本发明涉及用于从半导体衬底去除不需要的有机和无机残留物和污染物的半水性清洁组合物。 清洁组合物包括缓冲系统，其包含具有至少三个pKa值为约5至约7的羧酸基团的多元酸。该组合物还包含多元溶剂，例如甘油。 氟离子源也包括在本发明的清洁组合物中，并且主要负责从基底去除无机残留物。 本发明的清洁组合物具有低毒性并且是环境可接受的。

    pH buffered aqueous cleaning composition and method for removing photoresist residue
    8.
    发明申请
    pH buffered aqueous cleaning composition and method for removing photoresist residue 有权
    pH缓冲水溶液清洗组合物和去除光致抗蚀剂残留物的方法

    公开(公告)号：US20070161528A1

    公开(公告)日：2007-07-12

    申请号：US11330815

    申请日：2006-01-12

    申请人： Aiping Wu ,  Roberto Rovito

    发明人： Aiping Wu ,  Roberto Rovito

    IPC分类号： C11D7/32

    CPC分类号： C11D11/0047 ,  C11D3/046 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/349 ,  C11D7/10 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/02071

    摘要： A residue cleaning composition includes: (a) water; (b) a fluoride; (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method of removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by contacting the residue with the cleaning composition.

    摘要翻译： 残渣清洗组合物包括：（a）水; （b）氟化物; （c）包含有机酸和碱的pH缓冲体系。 有机酸可以是氨基烷基磺酸和/或氨基烷基羧酸。 碱可以是胺和/或季烷基氢氧化铵。 该组合物基本上不含添加的有机溶剂，并且具有约5至约12的pH。从底物中除去残余物的方法包括使残余物与清洁组合物接触。 用于限定图案的方法包括将图案通过光致抗蚀剂蚀刻到基底中，将图案化基底加热到足以使光致抗蚀剂灰化并提供残余物的温度，并通过使残余物与清洁组合物接触来除去残余物。

    Composition and method comprising same for removing residue from a substrate
    9.
    发明申请
    Composition and method comprising same for removing residue from a substrate 审中-公开
    包含从基质中除去残余物的组合物和方法

    公开(公告)号：US20060003910A1

    公开(公告)日：2006-01-05

    申请号：US11142450

    申请日：2005-06-02

    申请人： Jiun Hsu ,  Aiping Wu ,  Matthew Egbe

    发明人： Jiun Hsu ,  Aiping Wu ,  Matthew Egbe

    IPC分类号： G03F7/42

    CPC分类号： C23F11/165 ,  C23F11/141 ,  C23F11/16 ,  C23G1/20 ,  G03F7/425 ,  G03F7/426

    摘要： A composition for removing residues and method using same are described herein. In one aspect, the composition comprises: an organic polar solvent; water; a quaternary ammonium compound; and a mercapto-containing corrosion inhibitor selected from a compound having the following formulas (I), (II), 2-mercaptothiazoline, 3-mercaptopropyl-trimethoxysilane, and mixtures thereof: wherein X, Y, and Z are each independently selected from C, N, O, S, and P; R1, R2, R3, R4, R5, and R6 are each independently an alkyl group having a formula CnH2n+1; R7 is one selected from H, —OH, —COOH, and —NH2; and R8 is selected from an alkyl group having a formula CnH2n+1, or an alkanol group having a formula CnH2nOH; n ranges from 0 to 20; and the composition is substantially free of a water soluble amine. In another aspect, the composition comprises hydroxylamine wherein the mass ratio of hydroxylamine to quarternary ammonium compound is less than 3.

    摘要翻译： 本文描述了用于除去残余物的组合物和使用其的方法。 一方面，组合物包含：有机极性溶剂; 水; 季铵化合物; 和选自具有下式（I），（II），2-巯基噻唑啉，3-巯基丙基三甲氧基硅烷及其混合物的化合物的含巯基腐蚀抑制剂：其中X，Y和Z各自独立地选自C ，N，O，S和P; R 1，R 2，R 3，R 4，R 5， 和R 6各自独立地是具有式C n H 2n + 1的烷基; R 7是选自H，-OH，-COOH和-NH 2的一个; 和R 8选自具有式C n H 2n + 1的烷基或具有式C n H 2n OH; n的范围为0〜20; 并且组合物基本上不含水溶性胺。 在另一方面，组合物包含羟胺，其中羟胺与季铵化合物的质量比小于3。

    Composition and method for photoresist removal
    10.
    发明授权
    Composition and method for photoresist removal 有权
    光致抗蚀剂去除的组成和方法

    公开(公告)号：US08288330B2

    公开(公告)日：2012-10-16

    申请号：US11738699

    申请日：2007-04-23

    申请人： Aiping Wu ,  John Anthony Marsella

    发明人： Aiping Wu ,  John Anthony Marsella

    IPC分类号： C11D7/50

    CPC分类号： G03F7/426 ,  H01L21/31133

    摘要： The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.

    摘要翻译： 本发明是一种用于在电子器件衬底上去除多层光致抗蚀剂层的组合物，用于对衬底上的光刻胶进行返工，包括： （i）至少三种离散溶剂的溶剂共混物，（ii）至少一种有机磺酸，和（iii）至少一种腐蚀抑制剂。 本发明也是使用该组合物的方法。 该组合物和方法成功地在低于65℃的温度和三分钟的接触时间下除去这种多层光致抗蚀剂，从而允许单晶片工具上的高通量。