公开(公告)号：US07888302B2

公开(公告)日：2011-02-15

申请号：US11313495

申请日：2005-12-19

申请人： Aiping Wu ,  Roberto John Rovito

发明人： Aiping Wu ,  Roberto John Rovito

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/042 ,  C11D3/2075 ,  C11D3/24 ,  C11D3/26 ,  C11D3/28 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3281 ,  G03F7/425 ,  G03F7/426

摘要： A composition and method comprising same for selectively removing residues such as, for example, ashed photoresist and/or processing residues are disclosed herein. In one aspect, there is provided a composition for removing residue wherein the composition has a pH ranging from about 2 to about 9 comprising: a buffer solution comprising an organic acid and a conjugate base of the organic acid in a molar ratio of acid to base ranging from 10:1 to 1:10; a fluoride, and water, provided that the composition is substantially free of an added organic solvent. In another aspect, the composition may further comprise a corrosion inhibitor and/or a surfactant.

摘要翻译： 本文公开了包含其的用于选择性去除残留物例如灰化光致抗蚀剂和/或加工残余物的组合物和方法。 在一个方面，提供了一种用于除去残余物的组合物，其中组合物的pH为约2至约9，包括：包含有机酸和有机酸的共轭碱的缓冲溶液，其酸与碱的摩尔比 范围从10：1到1:10; 氟化物和水，条件是组合物基本上不含加入的有机溶剂。 在另一方面，组合物还可以包含腐蚀抑制剂和/或表面活性剂。

公开(公告)号：US07534753B2

公开(公告)日：2009-05-19

申请号：US11330815

申请日：2006-01-12

申请人： Aiping Wu ,  Roberto John Rovito

发明人： Aiping Wu ,  Roberto John Rovito

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/046 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/349 ,  C11D7/10 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/02071

摘要： A residue cleaning composition includes: (a) water; (b) a fluoride; (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method of removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by contacting the residue with the cleaning composition.

摘要翻译： 残渣清洗组合物包括：（a）水; （b）氟化物; （c）包含有机酸和碱的pH缓冲体系。 有机酸可以是氨基烷基磺酸和/或氨基烷基羧酸。 碱可以是胺和/或季烷基氢氧化铵。 该组合物基本上不含添加的有机溶剂，并且具有约5至约12的pH。从底物中除去残余物的方法包括使残余物与清洁组合物接触。 用于限定图案的方法包括将图案通过光致抗蚀剂蚀刻到基底中，将图案化基底加热到足以使光致抗蚀剂灰化并提供残余物的温度，并通过使残余物与清洁组合物接触来除去残余物。

公开(公告)号：US07682458B2

公开(公告)日：2010-03-23

申请号：US11050562

申请日：2005-02-03

申请人： Roberto John Rovito ,  Aiping Wu

发明人： Roberto John Rovito ,  Aiping Wu

IPC分类号： C11D7/32

CPC分类号： C11D7/3209 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D7/3281

摘要： A composition and method comprising same for selectively removing residues such as, for example, ashed photoresist and/or processing residues are disclosed herein. In one aspect, there is provided a composition for removing residue wherein the composition has a pH ranging from about 2 to about 9 comprising: a buffer solution comprising an organic acid and a conjugate base of the organic acid in a molar ratio of acid to base ranging from 10:1 to 1:10; a fluoride, and water, provided that the composition is substantially free of an added organic solvent. In another aspect, the composition may further comprise a corrosion inhibitor.

摘要翻译： 本文公开了一种组合物和方法，其组合物和方法包括用于选择性去除残留物，例如灰化光致抗蚀剂和/或加工残余物。 在一个方面，提供了一种用于除去残余物的组合物，其中组合物的pH为约2至约9，包括：包含有机酸和有机酸的共轭碱的缓冲溶液，其酸与碱的摩尔比 范围从10：1到1:10; 氟化物和水，条件是组合物基本上不含加入的有机溶剂。 另一方面，组合物还可包含腐蚀抑制剂。

公开(公告)号：US08772214B2

公开(公告)日：2014-07-08

申请号：US11250250

申请日：2005-10-14

申请人： Aiping Wu ,  Roberto John Rovito

发明人： Aiping Wu ,  Roberto John Rovito

IPC分类号： C11D1/62 ,  C11D11/00 ,  C11D3/24

CPC分类号： C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/245 ,  C11D7/08 ,  C11D7/3209 ,  C23G1/18 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02057

摘要： A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9.

摘要翻译： 本文描述了用于从基板去除残留物（例如但不限于后蚀刻和/或后灰化光刻胶，等离子体蚀刻，灰化及其混合物）的组合物和方法。 在一个方面，提供了从基材中除去残余物的方法，包括：使基材与包含水的组合物接触; 氢氧化季铵化合物; 含氟化合物; 和任选的腐蚀抑制剂，其中组合物不含加入的有机溶剂，并且其中组合物的pH大于9。

公开(公告)号：US07879782B2

公开(公告)日：2011-02-01

申请号：US11249207

申请日：2005-10-13

申请人： Aiping Wu ,  Roberto John Rovito

发明人： Aiping Wu ,  Roberto John Rovito

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/06 ,  C11D7/10 ,  C11D7/34 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02071

摘要： An aqueous-based composition and method comprising same for removing residues such as without limitation post-ashed and/or post-etched photoresist from a substrate is described herein. In one aspect, there is provided a composition for removing residues comprising: water; at least one selected from a hydroxylamine, a hydroxylamine salt compound, and mixtures thereof; and a corrosion inhibitor wherein the composition is substantially free of an added organic solvent and provided that the corrosion inhibitor does not contain a water soluble organic acid.

摘要翻译： 本文描述了一种基于水性的组合物和包含其的方法，其用于从衬底去除残留物，例如但不限于后处理和/或蚀刻后的光致抗蚀剂。 一方面，提供一种用于除去残留物的组合物，包括：水; 选自羟胺，羟胺盐化合物及其混合物中的至少一种; 和腐蚀抑制剂，其中所述组合物基本上不含加入的有机溶剂，并且所述腐蚀抑制剂不含水溶性有机酸。

公开(公告)号：US07879783B2

公开(公告)日：2011-02-01

申请号：US11652407

申请日：2007-01-11

申请人： Aiping Wu

发明人： Aiping Wu

IPC分类号： C11D7/50

CPC分类号： C11D7/265 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/28 ,  C11D7/5022 ,  C11D11/0047

摘要： The present invention relates to a semi-aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from semiconductor substrates. The cleaning composition comprises a buffering system comprising a polyprotic acid having at least three carboxylic acid groups with a pKa value of about 5 to about 7. The composition also comprises a polyhydric solvent, such as glycerol. A fluoride ion source is also included in the cleaning compositions of the present invention and is principally responsible for removing inorganic residues from the substrate. The cleaning compositions of the present invention have a low toxicity and are environmentally acceptable.

摘要翻译： 本发明涉及用于从半导体衬底去除不需要的有机和无机残留物和污染物的半水性清洁组合物。 清洁组合物包括缓冲系统，其包含具有至少三个pKa值为约5至约7的羧酸基团的多元酸。该组合物还包含多元溶剂，例如甘油。 氟离子源也包括在本发明的清洁组合物中，并且主要负责从基底去除无机残留物。 本发明的清洁组合物具有低毒性并且是环境可接受的。

公开(公告)号：US20070161528A1

公开(公告)日：2007-07-12

申请号：US11330815

申请日：2006-01-12

申请人： Aiping Wu ,  Roberto Rovito

发明人： Aiping Wu ,  Roberto Rovito

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/046 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/349 ,  C11D7/10 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/02071

摘要： A residue cleaning composition includes: (a) water; (b) a fluoride; (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method of removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by contacting the residue with the cleaning composition.

摘要翻译： 残渣清洗组合物包括：（a）水; （b）氟化物; （c）包含有机酸和碱的pH缓冲体系。 有机酸可以是氨基烷基磺酸和/或氨基烷基羧酸。 碱可以是胺和/或季烷基氢氧化铵。 该组合物基本上不含添加的有机溶剂，并且具有约5至约12的pH。从底物中除去残余物的方法包括使残余物与清洁组合物接触。 用于限定图案的方法包括将图案通过光致抗蚀剂蚀刻到基底中，将图案化基底加热到足以使光致抗蚀剂灰化并提供残余物的温度，并通过使残余物与清洁组合物接触来除去残余物。

公开(公告)号：US20060003910A1

公开(公告)日：2006-01-05

申请号：US11142450

申请日：2005-06-02

申请人： Jiun Hsu ,  Aiping Wu ,  Matthew Egbe

发明人： Jiun Hsu ,  Aiping Wu ,  Matthew Egbe

IPC分类号： G03F7/42

CPC分类号： C23F11/165 ,  C23F11/141 ,  C23F11/16 ,  C23G1/20 ,  G03F7/425 ,  G03F7/426

摘要： A composition for removing residues and method using same are described herein. In one aspect, the composition comprises: an organic polar solvent; water; a quaternary ammonium compound; and a mercapto-containing corrosion inhibitor selected from a compound having the following formulas (I), (II), 2-mercaptothiazoline, 3-mercaptopropyl-trimethoxysilane, and mixtures thereof: wherein X, Y, and Z are each independently selected from C, N, O, S, and P; R1, R2, R3, R4, R5, and R6 are each independently an alkyl group having a formula CnH2n+1; R7 is one selected from H, —OH, —COOH, and —NH2; and R8 is selected from an alkyl group having a formula CnH2n+1, or an alkanol group having a formula CnH2nOH; n ranges from 0 to 20; and the composition is substantially free of a water soluble amine. In another aspect, the composition comprises hydroxylamine wherein the mass ratio of hydroxylamine to quarternary ammonium compound is less than 3.

摘要翻译： 本文描述了用于除去残余物的组合物和使用其的方法。 一方面，组合物包含：有机极性溶剂; 水; 季铵化合物; 和选自具有下式（I），（II），2-巯基噻唑啉，3-巯基丙基三甲氧基硅烷及其混合物的化合物的含巯基腐蚀抑制剂：其中X，Y和Z各自独立地选自C ，N，O，S和P; R 1，R 2，R 3，R 4，R 5， 和R 6各自独立地是具有式C n H 2n + 1的烷基; R 7是选自H，-OH，-COOH和-NH 2的一个; 和R 8选自具有式C n H 2n + 1的烷基或具有式C n H 2n OH; n的范围为0〜20; 并且组合物基本上不含水溶性胺。 在另一方面，组合物包含羟胺，其中羟胺与季铵化合物的质量比小于3。

公开(公告)号：US08288330B2

公开(公告)日：2012-10-16

申请号：US11738699

申请日：2007-04-23

申请人： Aiping Wu ,  John Anthony Marsella

发明人： Aiping Wu ,  John Anthony Marsella

IPC分类号： C11D7/50

CPC分类号： G03F7/426 ,  H01L21/31133

摘要： The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.

摘要翻译： 本发明是一种用于在电子器件衬底上去除多层光致抗蚀剂层的组合物，用于对衬底上的光刻胶进行返工，包括： （i）至少三种离散溶剂的溶剂共混物，（ii）至少一种有机磺酸，和（iii）至少一种腐蚀抑制剂。 本发明也是使用该组合物的方法。 该组合物和方法成功地在低于65℃的温度和三分钟的接触时间下除去这种多层光致抗蚀剂，从而允许单晶片工具上的高通量。

公开(公告)号：US20100152086A1

公开(公告)日：2010-06-17

申请号：US12624970

申请日：2009-11-24

申请人： Aiping Wu ,  Madhukar Bhaskara Rao ,  Eugene C. Baryschpolec

发明人： Aiping Wu ,  Madhukar Bhaskara Rao ,  Eugene C. Baryschpolec

IPC分类号： C11D7/32

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/2065 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/43 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5004 ,  G03F7/425

摘要： The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.

摘要翻译： 本发明是用于从具有CoWP特征的半导体衬底湿法清除去除后蚀刻和灰渣的制剂，其包括： 去离子水; 有机酸; 胺和/或季铵氢氧化物; 其中所述制剂与CoWP特征相容，并且（a）胺和/或季铵氢氧化物与有机酸的摩尔比提供在7-14范围内的pH; 或（b）制剂包括腐蚀抑制剂。 还描述了使用该制剂的方法。