ALIGNMENT METHOD AND APPARATUS OF MASK PATTERN
    2.
    发明申请
    ALIGNMENT METHOD AND APPARATUS OF MASK PATTERN 失效
    掩模图案的对准方法和装置

    公开(公告)号:US20090284719A1

    公开(公告)日:2009-11-19

    申请号:US12025285

    申请日:2008-05-15

    IPC分类号: G03B27/68 G03B27/42

    摘要: An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.

    摘要翻译: 图案化处理中的掩模图案的对准方法包括通过将第一掩模图案转印到晶片上或形成在晶片上的层来形成第一层,以及通过将第二掩模图案转印到第一层上而形成第二层。 该方法特别包括第一对准步骤,当形成第一层时,进行对准以最小化晶片的中心位置和第一掩模图案的中心位置之间的偏移和晶片与第一掩模图案之间的残余旋转误差 并且基于第一层图案上的第二层图案的叠加的偏移量进行对准。 该偏差是由晶片的线性膨胀和收缩引起的,并且由晶片和掩模图案之间的正交误差引起,并且通过在多个晶片中连续执行的图案处理中预先测量来获得偏差。 该方法还包括第二对准步骤,当形成第二层时,仅进行对准以最小化第一层图案的中心位置和第二掩模图案的中心位置之间的偏移和第一层图案之间的残余旋转误差 和第二掩模图案。

    PLANARIZING METHOD
    3.
    发明申请
    PLANARIZING METHOD 有权
    平面化方法

    公开(公告)号:US20090039056A1

    公开(公告)日:2009-02-12

    申请号:US11837189

    申请日:2007-08-10

    IPC分类号: B44C1/22

    摘要: Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.

    摘要翻译: 提供一种平面化方法,其中可以进行具有高平坦度的平坦化,而不受所施加的抗蚀剂膜中的膜厚度的分布的限制。 平面化方法包括以下步骤:在基板上形成的平坦化膜上形成抗蚀剂膜; 将形成有平坦化膜的区域的各个部分中的曝光量曝光在抗蚀剂膜上,曝光光的量被确定为实现用于平版化抗蚀剂的膜厚度 各部分电影; 显影曝光的抗蚀剂膜,以形成具有受控的膜厚分布的抗蚀剂膜图案; 并蚀刻抗蚀剂膜图案和待平坦化的膜,直到消除要平坦化的膜的厚度消除量。

    THIN FILM MAGNETIC HEAD, THIN FILM MAGNETIC HEAD DEVICE, MAGNETIC RECORDING/REPRODUCING APPARATUS, AND METHOD FOR MANUFACTURING THIN FILM MAGNETIC HEAD
    4.
    发明申请
    THIN FILM MAGNETIC HEAD, THIN FILM MAGNETIC HEAD DEVICE, MAGNETIC RECORDING/REPRODUCING APPARATUS, AND METHOD FOR MANUFACTURING THIN FILM MAGNETIC HEAD 有权
    薄膜磁头,薄膜磁头装置,磁记录/再现装置及制造薄膜磁头的方法

    公开(公告)号:US20130010390A1

    公开(公告)日:2013-01-10

    申请号:US13176134

    申请日:2011-07-05

    IPC分类号: G11B5/60 G11B5/127

    摘要: A thin-film magnetic head includes a slider substrate and a write element. The slider substrate has an air bearing surface at one side thereof. The write element has a recording magnetic pole film. The recording magnetic pole film is disposed on a plane crossing the air bearing surface over the slider substrate and has a large-width portion and a small-width portion continuously arranged in the named order toward the air bearing surface. The small-width portion has a smaller width than the large-width portion. Of the large-width portion and the small-width portion, at least the small-width portion has a first portion and a second portion. The second portion is continuous with an upper end of the first portion and has both side faces inclined in such a direction as to increase the width. An external angle of the first portion formed by a plane parallel to a bottom face and the side face is larger than an external angle of the second portion formed by a plane parallel to the bottom face and the side face.

    摘要翻译: 薄膜磁头包括滑块基板和写入元件。 滑块基板在其一侧具有空气轴承表面。 写元件具有记录磁极膜。 记录磁极膜设置在与滑动基板上的空气轴承表面相交的平面上,并且具有朝向空气轴承表面依次连续排列的大宽度部分和小宽度部分。 小宽度部分的宽度比宽度大的部分小。 在大宽度部分和小宽度部分中,至少小宽度部分具有第一部分和第二部分。 第二部分与第一部分的上端连续,并且具有在增加宽度的方向上倾斜的两个侧面。 由平行于底面和侧面的平面形成的第一部分的外角比由平行于底面和侧面的平面形成的第二部分的外角大。