公开(公告)号：US5318917A

公开(公告)日：1994-06-07

申请号：US15191

申请日：1993-02-10

申请人： Akihiro Kanda ,  Yoshiro Fujita ,  Takehiro Hirai ,  Mitsuo Tanaka ,  Hideya Esaki

发明人： Akihiro Kanda ,  Yoshiro Fujita ,  Takehiro Hirai ,  Mitsuo Tanaka ,  Hideya Esaki

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L21/28525 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/7325 ,  Y10S148/011 ,  Y10S148/124

摘要： A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating films extending on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion layer of the first conduction type, a collector contact diffusion layer of the first conduction type; and a base contact diffusion layer of the second conduction type; locating an end of the emitter diffusion layer and a first end of the base contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the emitter lead-out electrode; and locating a second end of the base contact diffusion layer and an end of the collector contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the collector lead-out electrode.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一导电类型的半导体衬底中的预定区域中形成基极扩散层，所述基极扩散层为第二导电型; 形成第一绝缘膜，同时在发射极接触形成区域和集电极接触形成区域之上的区域形成发射极引出电极和集电极引出电极，第一绝缘膜在发射极和集电极引线 所述发射极和集电极引出电极包括对应于所述第一导电类型的杂质; 在发射极和集电极引出电极的侧面形成第二绝缘膜; 形成基部接触; 形成包括对应于第二导电类型的杂质的基极引出电极; 扩散来自发射极引出电极，集电极引出电极和基极引出电极的杂质，以形成第一导电类型的发射极扩散层，第一导电类型的集电极接触扩散层; 和第二导电类型的基极接触扩散层; 将发射极扩散层的端部和基极接触扩散层的第一端定位在在发射极引出电极侧延伸的第二绝缘膜的正下方的位置; 以及将所述基极接触扩散层的第二端和所述集电极接触扩散层的端部定位在在所述集电体引出电极的一侧延伸的所述第二绝缘膜的正下方的位置。

公开(公告)号：US5204274A

公开(公告)日：1993-04-20

申请号：US750856

申请日：1991-08-29

申请人： Akihiro Kanda ,  Yoshiro Fujita ,  Takehiro Hirai ,  Mitsuo Tanaka ,  Hideya Esaki

发明人： Akihiro Kanda ,  Yoshiro Fujita ,  Takehiro Hirai ,  Mitsuo Tanaka ,  Hideya Esaki

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7325 ,  Y10S148/009

摘要： A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating extending films on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion layer of the first conduction type, a collector contact diffusion layer of the first conduction type, and a base contact diffusion layer of the second conduction type; locating an end of the emitter diffusion layer and a first end of the base contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the emitter lead-out electrode; and locating a second end of the base contact diffusion layer and an end of the collector contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the collector lead-out electrode.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一导电类型的半导体衬底中的预定区域中形成基极扩散层，所述基极扩散层是第二导电类型; 在发射极接触形成区域和集电极接触形成区域以上的区域中形成第一绝缘膜并同时形成发射极引出电极和集电极引出电极，发射极和集电极引线上的第一绝缘延伸膜 所述发射极和集电极引出电极包括对应于所述第一导电类型的杂质; 在发射极和集电极引出电极的侧面形成第二绝缘膜; 形成基部接触; 形成包括对应于第二导电类型的杂质的基极引出电极; 扩散来自发射极引出电极，集电极引出电极和基极引出电极的杂质，以形成第一导电类型的发射极扩散层，第一导电类型的集电极接触扩散层和 第二导电类型的基极接触扩散层; 将发射极扩散层的端部和基极接触扩散层的第一端定位在在发射极引出电极侧延伸的第二绝缘膜的正下方的位置; 以及将所述基极接触扩散层的第二端和所述集电极接触扩散层的端部定位在在所述集电体引出电极的一侧延伸的所述第二绝缘膜的正下方的位置。