-
公开(公告)号:US09388916B2
公开(公告)日:2016-07-12
申请号:US13307665
申请日:2011-11-30
申请人: Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
发明人: Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
CPC分类号: F16K99/003 , F16K99/0044 , Y10T29/49412 , Y10T137/1812
摘要: A microvalve device is provided that includes a through via located in an island structure supported on a thermally-insulating membrane supported by a frame. The through via is surrounded by a meltable sealing material. A heater element is positioned on the island structure for sealing the material over the through via by heating the sealing material.
摘要翻译: 提供了一种微型阀装置,其包括位于由框架支撑的绝热膜上支撑的岛状结构中的通孔。 通孔由可熔融的密封材料包围。 加热器元件位于岛状结构上,用于通过加热密封材料将材料密封在通孔上。
-
公开(公告)号:US20130133757A1
公开(公告)日:2013-05-30
申请号:US13307665
申请日:2011-11-30
申请人: Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
发明人: Akintunde I. Akinwande , Carol Livermore-Clifford , Martin A. Schmidt , Aalap S. Dighe , Luis Fernando Velásquez-García
CPC分类号: F16K99/003 , F16K99/0044 , Y10T29/49412 , Y10T137/1812
摘要: A microvalve device is provided that includes a through via located in an island structure supported on a thermally-insulating membrane supported by a frame. The through via is surrounded by a meltable sealing material. A heater element is positioned on the island structure for sealing the material over the through via by heating the sealing material.
摘要翻译: 提供了一种微型阀装置,其包括位于由框架支撑的绝热膜上支撑的岛状结构中的通孔。 通孔由可熔融的密封材料包围。 加热器元件位于岛状结构上,用于通过加热密封材料将材料密封在通孔上。
-
3.
公开(公告)号:US08198106B2
公开(公告)日:2012-06-12
申请号:US12233859
申请日:2008-09-19
IPC分类号: H01L21/00
CPC分类号: H01J1/3042 , H01J2201/319
摘要: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.
摘要翻译: 提供场发射器阵列结构。 场发射极阵列结构包括形成在半导体衬底上的多个垂直未门控晶体管结构。 半导体衬底包括多个垂直柱结构,以限定所述未门控晶体管结构。 在所述垂直非门控晶体管结构上形成多个发射极结构。 所述发射极结构中的每一个以压载方式定位在所述垂直非门控晶体管结构之一上,以便允许所述垂直非门控晶体管结构有效地提供具有较大饱和电流的高动态电阻。
-
-