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    METHOD AND APPARATUS FOR FORMING STRUCTURES OF POLYMER NANOBEADS
    3.
    发明申请
    METHOD AND APPARATUS FOR FORMING STRUCTURES OF POLYMER NANOBEADS 审中-公开
    形成聚合物纳米粒子结构的方法和装置

    公开(公告)号：US20110206839A1

    公开(公告)日：2011-08-25

    申请号：US12746044

    申请日：2009-01-05

    Applicant: Vladimir Bulovic ,  Murali Chaparala ,  Jianglong Chen ,  Eric Wing -Jing Lam ,  Valerie Leblanc ,  Martin A. Schmidt

    Inventor： Vladimir Bulovic ,  Murali Chaparala ,  Jianglong Chen ,  Eric Wing -Jing Lam ,  Valerie Leblanc ,  Martin A. Schmidt

    IPC: B05D5/06 ,  B05C11/00

    CPC classification number: G02B6/138 ,  B05D3/04 ,  B05D3/0453 ,  B05D3/107 ,  G02B2006/12071 ,  G03F7/168

    Abstract: The disclosure relates to providing printed structures of polymer that have substantially flat printed surfaces. In one embodiment, the disclosure relates to a post-printing treatment apparatus for receiving a substrate supporting a polymer printing thereon. The polymer can be PMMA or other suitable polymer. In a related embodiment, the polymer defines a thermoplastic polymer having a glass transition temperature. The apparatus can comprise of a chamber, and input manifold, an exhaust manifold, a solvent reservoir and a gas reservoir. The solvent reservoir provides one or more solvent systems adapted to chemically bind, and potentially react, with the polymer. The gas reservoir provides one or more gases for drying the substrate and printed polymer after the solvent treatment step. In one application, a substrate having printed surface thereon is placed in the chamber and exposed to the solvent system for sufficient period of time to provide substantially flat print surfaces.

    Abstract translation: 本公开涉及提供具有基本平坦的印刷表面的聚合物的印刷结构。 在一个实施例中，本公开涉及一种用于接收支撑其上的聚合物印刷的基板的后印刷处理设备。 聚合物可以是PMMA或其它合适的聚合物。 在相关实施方案中，聚合物限定了具有玻璃化转变温度的热塑性聚合物。 该装置可以包括腔室，输入歧管，排气歧管，溶剂储存器和气体储存器。 溶剂储存器提供一种或多种溶剂体系，其适于与聚合物化学结合并潜在地与聚合物反应。 在溶剂处理步骤之后，气体储存器提供用于干燥基底和印刷聚合物的一种或多种气体。 在一个应用中，其上具有印刷表面的基板放置在室中并暴露于溶剂系统足够的时间以提供基本平坦的印刷表面。

    METHOD AND APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN ELECTRICALLY-HEATED DISCHARGE NOZZLE
    4.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN ELECTRICALLY-HEATED DISCHARGE NOZZLE 审中-公开
    用于控制电加热排放喷嘴温度的方法和装置

    公开(公告)号：US20100188457A1

    公开(公告)日：2010-07-29

    申请号：US12580831

    申请日：2009-10-16

    Applicant: Connor F. Madigan ,  Martin A. Schmidt ,  Valerie Gassend

    Inventor： Connor F. Madigan ,  Martin A. Schmidt ,  Valerie Gassend

    IPC: B41J29/38

    CPC classification number: B41J2/175 ,  B41J2/14 ,  H01L51/0005

    Abstract: In an embodiment, the disclosure relates to a method and apparatus for fault monitoring and controlling operation of a discharge nozzle in a large array of discharge nozzles. An exemplary apparatus includes a thin, thermally conductive membrane, with an integrated thin-film electrical heater. When a fixed voltage is applied to the heater, and as the heater heats, the resistance of the heater will increase which will cause a concomitant decrease in the electrical current flowing through the heater. By measuring the resistance of the heater it can readily be determined whether the device is functioning properly.

    Abstract translation: 在一个实施例中，本公开涉及一种用于故障监测和控制排放喷嘴在大排放喷嘴中的操作的方法和装置。 示例性装置包括薄的导热膜，具有集成的薄膜电加热器。 当固定的电压施加到加热器时，并且当加热器加热时，加热器的电阻将增加，这将导致流过加热器的电流的伴随下降。 通过测量加热器的电阻，可以容易地确定设备是否正常工作。

    Sensor design and process
    5.
    发明授权
    Sensor design and process 有权
    传感器设计和工艺

    公开(公告)号：US07274079B2

    公开(公告)日：2007-09-25

    申请号：US11209164

    申请日：2005-08-22

    Applicant: Arjun Selvakumar ,  Howard D. Goldberg ,  Duli Yu ,  Matthew Ip ,  Martin A. Schmidt ,  James L. Marsh ,  Bing-Fai Fung ,  Philip Simon

    Inventor： Arjun Selvakumar ,  Howard D. Goldberg ,  Duli Yu ,  Matthew Ip ,  Martin A. Schmidt ,  James L. Marsh ,  Bing-Fai Fung ,  Philip Simon

    IPC: H01L29/84 ,  H01L21/00

    CPC classification number: G01P1/023 ,  G01D11/245 ,  G01P15/08 ,  G01P15/125 ,  G01V1/047 ,  G01V1/053 ,  G01V1/104 ,  G01V1/181 ,  G01V1/38 ,  Y10T29/49007

    Abstract: An accelerometer (305) for measuring seismic data. The accelerometer (305) includes an integrated vent hole for use during a vacuum sealing process and a balanced metal pattern for reducing cap wafer bowing. The accelerometer (305) also includes a top cap press frame recess (405) and a bottom cap press frame recess (420) for isolating bonding pressures to specified regions of the accelerometer (305). The accelerometer (305) is vacuum-sealed and includes a balanced metal pattern (730) to prevent degradation of the performance of the accelerometer (305). A dicing process is performed on the accelerometer (305) to isolate the electrical leads of the accelerometer (305). The accelerometer (305) further includes overshock protection bumpers (720) and patterned metal electrodes to reduce stiction during the operation of the accelerometer (305).

    Abstract translation: 一种用于测量地震数据的加速度计（305）。 加速度计（305）包括用于在真空密封过程中使用的集成通气孔以及用于减小盖晶片弯曲的平衡金属图案。 加速度计（305）还包括用于将结合压力隔离到加速度计（305）的特定区域的顶盖压制框架凹部（405）和底盖压制框架凹部（420）。 加速度计（305）被真空密封并且包括平衡的金属图案（730），以防止加速度计（305）的性能的劣化。 在加速度计（305）上执行切割处理以隔离加速度计（305）的电引线。 加速度计（305）还包括过冲保护缓冲器（720）和图案化的金属电极，以在加速度计（305）的操作期间减小静摩擦力。

    Micromachined threshold pressure switch and method of manufacture
    8.
    发明授权
    Micromachined threshold pressure switch and method of manufacture 失效
    微加工阈值压力开关及其制造方法

    公开(公告)号：US5164558A

    公开(公告)日：1992-11-17

    申请号：US726073

    申请日：1991-07-05

    Applicant: Michael A. Huff ,  Martin A. Schmidt

    Inventor： Michael A. Huff ,  Martin A. Schmidt

    IPC: G01L9/00 ,  H01H1/00 ,  H01H35/34

    CPC classification number: H01H1/0036 ,  G01L9/0042 ,  H01H35/34 ,  Y10T29/49105

    Abstract: A pressure activated threshold switch has two electrodes separated by a small distance across a cavity. One of the electrodes is made of a mechanically compliant material. As a uniform pressure is applied to the mechanically compliant electrode, a threshold is reached at which the electrode buckles under the applied load and makes contact with the second electrode thereby closing the switch. The switch exhibits mechanical hysteresis by subsequently opening under a lower applied load. The pressure threshold switch is fabricated using wafer to wafer silicon bonding along with conventional integrated fabrication steps. The techniques of integrated circuit technologies enable dimensional control to be very good and hence activation pressures are tightly controlled. The fabrication method exploits properties of wafer to wafer silicon bonding, such as residual pressure inside sealed cavities and plastic deformation of silicon. The buckling load or threshold pressure at which the switch closes is easily tailored to specific applications. Potential applications include threshold pressure sensors for indicating when automotive tires need inflation, tank pressure monitors in air and gas compressors, switches for keyboard pads, weight detectors and robotic tactile sensor arrays.

    Abstract translation: 压力启动阈值开关具有两个电极，通过腔体间隔一小段距离。 电极之一由机械柔性材料制成。 当均匀的压力施加到机械柔性电极时，达到阈值，在该阈值处电极在施加的负载下弯曲并与第二电极接触，从而闭合开关。 该开关通过随后在较低的施加负载下打开而呈现机械滞后。 压力阈值开关与常规的集成制造步骤一起使用晶圆到晶圆硅键合制造。 集成电路技术的技术使得尺寸控制非常好，因此激活压力得到严格控制。 该制造方法利用晶片与晶片硅键合的性质，例如密封空腔内的残余压力和硅的塑性变形。 开关关闭时的屈曲载荷或阈值压力容易根据具体应用进行定制。 潜在应用包括阈值压力传感器，用于指示汽车轮胎何时需要充气，空气和气体压缩机中的罐压力监测器，键盘垫的开关，重量检测器和机器人触觉传感器阵列。

    Method of making a microvalve
    9.
    发明授权
    Method of making a microvalve 失效
    制作微孔的方法

    公开(公告)号：US5142781A

    公开(公告)日：1992-09-01

    申请号：US566997

    申请日：1990-08-13

    Applicant: Michael Mettner ,  Martin A. Schmidt ,  Theresa Lober ,  Michael A. Huff

    Inventor： Michael Mettner ,  Martin A. Schmidt ,  Theresa Lober ,  Michael A. Huff

    IPC: F16K7/12 ,  F15C5/00 ,  F16K7/17 ,  F16K31/02 ,  F16K99/00 ,  H01L41/09 ,  H01L41/22

    CPC classification number: F16K99/0001 ,  F15C5/00 ,  F16K99/0005 ,  F16K99/0015 ,  F16K99/0046 ,  F16K99/0048 ,  F16K99/0059 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/009 ,  F16K2099/0096 ,  F16K99/0034 ,  Y10T29/49412 ,  Y10T29/49419

    Abstract: A microvalve composed of multiple layers bonded together is distinguished by the fact that all layers are structured only from one side. Prior to bonding of a new layer to the preceding layer, the new layer is homogeneous or unstructured. Only after bonding of the new layer to the preceding layers or wafers is the newly-applied layer provided with a structure, by etching or other profiling method. This simplifies construction, and reduces manufacturing cost, of the microvalve. The valve can be used for either liquid or gaseous media. It is adapted for use, inter alia, as a fuel injection valve or as a pilot control stage of servo-valves used in anti-lock braking systems (ABS). A method of producing a sealed cavity with a residual gas pressure therein, which may have applications other than valve manufacture, is also disclosed.

    Abstract translation: 由多层结合在一起的微型阀的特征在于所有层仅由一侧构成。 在将新层与前一层结合之前，新层是均匀的或非结构化的。 只有在新层与前述层或晶片结合之后，才能通过蚀刻或其它成像方法提供具有结构的新应用层。 这简化了微型阀的结构，降低了制造成本。 阀门可用于液体或气体介质。 它适用于特别是作为燃料喷射阀或用作防抱死制动系统（ABS）中使用的伺服阀的先导控制级。 还公开了一种制造其中具有残留气体压力的密封腔的方法，其可以具有除阀制造之外的应用。

    Selective electrochemical etching
    10.
    发明授权
    Selective electrochemical etching 失效
    选择电化学蚀刻

    公开(公告)号：US5129982A

    公开(公告)日：1992-07-14

    申请号：US670119

    申请日：1991-03-15

    Applicant: Su-Chee S. Wang ,  Vincent M. McNeil ,  Martin A. Schmidt

    Inventor： Su-Chee S. Wang ,  Vincent M. McNeil ,  Martin A. Schmidt

    IPC: H01L21/3063

    CPC classification number: H01L21/3063 ,  Y10S438/924

    Abstract: A method of selectively etching a body of a semiconductor material, such as single crystalline silicon, having regions of n-type and p-type conductivity to remove at least a portion of the n-type region. The body is placed in an etching solution of an etchant having a high pH value and a positive voltage is applied between the body and the etchant. This forms passivating layers on the surfaces of the two regions with the passivating layer on the n-type region being different from that on the p-type region. The voltage is then removed and the body is etched for a period long enough to remove all of the passivating layer from the n-type region and at least a portion of the n-type region, but is not long enough to remove all of the passivating layer from the p-type region. This is allowed by the difference between the passivating layers on the two regions. The steps of forming the passivating layers and etching them is repeated until a desired amount of the n-type region is removed.

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