摘要:
A metal particle detecting sensor (10), having a simple structure, can perform in-line analysis for metal particles in fluid and also can precisely estimate or detect the number of metal particles for each particle size. Metal films (1) and insulating films (2) are alternately laminated one upon another, and every other metal film (1) in the laminate is connected in parallel with one another to one of two lead wires (3a, 3b) so as to form comb electrodes in the laminate of the sensor, and one end face of the laminate is immersed in a fluid (4) containing metal particles so as to detect the metal particles.
摘要:
An electrode structure of a metallic particle detecting sensor capable of detecting with high efficiency metal powders floating in a wide range in an oil tank. The electrode structure is formed by opposing, on a substrate, a pair of electrodes (1, 2), formed of thin film metals of such as Ta, W, Pt, Cr, Au or the like, having combed (toothed) structures with their respective teeth being meshed or interdigitated with each other.
摘要:
Hydraulic oil for use in construction machinery, wherein the hydraulic oil comprises a poly(meth)acrylate of weight average molecular weight in the range of from 30,000 to 100,000 in a highly refined base oil but does not incorporate an oiliness agent, and wherein the kinetic viscosity at 60° C. is in the range of from 25 to 60 mm{hacek over ( )}/s, the kinetic viscosity at 80° C. is in the range of from 15 to 34 mm{hacek over ( )}/s, the viscosity index is in the range of from 200 to 220, and the low temperature cranking viscosity at 25° C. is in the range of from 1000 to 8000 mPa·s. The hydraulic oil of the present invention not only has a high kinetic viscosity in the high-temperature domain even though the incorporation of an oiliness agent is omitted, and can thereby effect satisfactory operation efficiently and which has excellent braking characteristics, but which also has a low viscosity in the low-temperature domain and so has excellent low-temperature performance.
摘要:
A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film.
摘要:
A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.