公开(公告)号：US20060011916A1

公开(公告)日：2006-01-19

申请号：US11088766

申请日：2005-03-25

申请人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

发明人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694

摘要： A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.

摘要翻译： 用于外延生长的衬底包括含硅衬底，硅 - 锗膜和网状结构。 硅 - 锗膜在含硅衬底上层叠形成。 网状结构与含硅基板和硅锗膜之间的界面相邻配置，由连续延伸的90度位错位错线构成。 使网状结构的90度错位错位线显着延长，而不会间断地断裂成短长度，使得90度位错循环地布置在与界面平行的平面中。 因此，90度位错均匀地存在于平行于界面的平面中。 因此，硅 - 锗膜的晶格中的应变已经被更均匀地松弛。

公开(公告)号：US20050189652A1

公开(公告)日：2005-09-01

申请号：US10925976

申请日：2004-08-26

申请人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

发明人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/28518

摘要： A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

摘要翻译： 制备硅衬底，并在硅衬底上形成钛中间层。 然后，在钛中间层上形成含有化合物的复合元素层，构成预定的硅化物膜，形成多层中间结构体，进行热处理，形成由硅基板的硅元素构成的硅化物膜 和含化合物元素层的复合元素。

公开(公告)号：US06943376B2

公开(公告)日：2005-09-13

申请号：US10415914

申请日：2002-09-02

申请人： Osamu Nakatsuka ,  Ryohei Konishi ,  Ryuichi Yasukochi ,  Yasuo Koide ,  Masanori Murakami ,  Naoki Shibata

发明人： Osamu Nakatsuka ,  Ryohei Konishi ,  Ryuichi Yasukochi ,  Yasuo Koide ,  Masanori Murakami ,  Naoki Shibata

IPC分类号： C23C14/14 ,  H01L21/04 ,  H01L21/28 ,  H01L29/24 ,  H01L29/45 ,  H01L29/861 ,  H01L29/868 ,  H01L33/00 ,  C04B41/90

CPC分类号： H01L29/45 ,  H01L29/1608 ,  H01L33/34 ,  H01L33/40

摘要： An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).

摘要翻译： 本发明的目的是提供一种用于p型SiC的电极，其可以由于电极的形成而为半导体晶体层提供改善的表面形态和较少的热损伤。 在本发明中，制造p型电极以含有选自镍（Ni），钴（Co），钯（Pd）和铂（Pt）中的至少一种。