公开(公告)号：US20060011916A1

公开(公告)日：2006-01-19

申请号：US11088766

申请日：2005-03-25

申请人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

发明人： Akira Sakai ,  Noriyuki Taoka ,  Osamu Nakatsuka ,  Shigeaki Zaima ,  Yukio Yasuda

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694

摘要： A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely.

摘要翻译： 用于外延生长的衬底包括含硅衬底，硅 - 锗膜和网状结构。 硅 - 锗膜在含硅衬底上层叠形成。 网状结构与含硅基板和硅锗膜之间的界面相邻配置，由连续延伸的90度位错位错线构成。 使网状结构的90度错位错位线显着延长，而不会间断地断裂成短长度，使得90度位错循环地布置在与界面平行的平面中。 因此，90度位错均匀地存在于平行于界面的平面中。 因此，硅 - 锗膜的晶格中的应变已经被更均匀地松弛。

公开(公告)号：US20050189652A1

公开(公告)日：2005-09-01

申请号：US10925976

申请日：2004-08-26

申请人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

发明人： Osamu Nakatsuka ,  Akira Sakai ,  Shigeaki Zaima ,  Yukio Yasuda ,  Kazuya Okubo ,  Yoshinori Tsuchiya

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/28518

摘要： A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

摘要翻译： 制备硅衬底，并在硅衬底上形成钛中间层。 然后，在钛中间层上形成含有化合物的复合元素层，构成预定的硅化物膜，形成多层中间结构体，进行热处理，形成由硅基板的硅元素构成的硅化物膜 和含化合物元素层的复合元素。

公开(公告)号：US07074676B2

公开(公告)日：2006-07-11

申请号：US10468738

申请日：2002-02-13

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

IPC分类号： H01L21/8247 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42332 ,  Y10S438/962

摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

摘要翻译： 以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极 第三绝缘膜。

公开(公告)号：US07030000B2

公开(公告)日：2006-04-18

申请号：US10807235

申请日：2004-03-24

申请人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

发明人： Akira Sakai ,  Yukio Yasuda ,  Shigeaki Zaima ,  Mitsuo Sakashita ,  Hiroki Kondo ,  Shinsuke Sakashita

IPC分类号： H01L21/31 ,  H01L29/772

CPC分类号： H01L21/3247 ,  C30B29/16 ,  C30B33/02 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.

摘要翻译： 给定的金属氧化物膜在衬底上外延生长。 然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜 构成要素。

公开(公告)号：US20050087792A1

公开(公告)日：2005-04-28

申请号：US10925966

申请日：2004-08-26

申请人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

发明人： Hiroki Kondo ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai ,  Mitsuo Sakashita ,  Shinya Naito ,  Masaki Satake

IPC分类号： C01B33/027 ,  C30B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332

摘要： A silicon oxide layer is formed at a surface region of a silicon substrate. Then, an amorphous silicon layer 13 is formed preferably in a thickness of 1 nm or below on the silicon substrate via the silicon oxide layer. Then, the amorphous silicon layer 13 is exposed to a silane gas preferably with heating the silicon substrate within a temperature range of 400-800° C. to form a high density and minute silicon nanocrystal.

摘要翻译： 在硅衬底的表面区域形成氧化硅层。 然后，通过硅氧化物层，在硅衬底上优选形成1nm以下的非晶硅层13。 然后，非晶硅层13优选在400-800℃的温度范围内加热硅衬底而暴露于硅烷气体，以形成高密度和微小的硅纳米晶体。